Polysilicon channel TFT with separated double-gate for unified RAM (URAM)unified function for nonvolatile SONOS flash and high-speed capacitorless 1T-DRAM

IEEE Transactions on Electron Devices

Volumn 57, Issue 3, 2010, Pages 601-607

  Han, Jin Woo ^a   Ryu, Seong Wan ^b   Kim, Dong Hyun ^a   Choi, Yang Kyu ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

Capacitorless 1T DRAM; Flash memory; Nonvolatile memory (NVM); Separated double gate; Silicon oxide nitride oxide semiconductor (SONOS); Thin film transistor (TFT); Unified random access memory (URAM)

Indexed keywords

CAPACITOR-LESS; CAPACITORLESS 1T-DRAM; DOUBLE-GATE; NITRIDE OXIDE; NON-VOLATILE MEMORIES; RANDOM ACCESS MEMORIES; SEPARATED DOUBLE-GATE;

DYNAMIC RANDOM ACCESS STORAGE; GATE DIELECTRICS; GATES (TRANSISTOR); NITRIDES; POLYSILICON; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEPARATION; SILICON OXIDES; THIN FILM TRANSISTORS;

FLASH MEMORY;

EID: 77649191261     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2038584     Document Type: Article

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