Hysteresis effect on traps of Si3N4 sensing membranes for pH difference sensitivity

Microelectronics Reliability

Volumn 50, Issue 5, 2010, Pages 738-741

  Lue, Cheng En ^a   Wang, Jer Chyi ^a   Pijanowska, Dorota G ^b   Yang, Chia Ming ^c   Wang, I Shun ^a   Lee, Huang Chia ^a   Lai, Chao Sung ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b INSTITUTE OF BIOCYBERNETICS AND BIOMEDICAL ENGINEERING   (Poland)

^c Inotera Memories   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; EIS STRUCTURES; ELECTROLYTE INSULATOR SEMICONDUCTORS; HYSTERESIS EFFECT; PH SENSITIVITY; PH-DEPENDENT; REFERENCE FIELD; SENSING MEMBRANES; STACKED LAYER; SUBSTRATE BIAS; SWEEP DIRECTIONS; TRAPPING EFFECTS;

FIELD EFFECT TRANSISTORS; HYSTERESIS; ION SENSITIVE FIELD EFFECT TRANSISTORS; PH SENSORS; SILICON; SILICON NITRIDE;

PH EFFECTS;

EID: 77953128503     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2010.01.026     Document Type: Article

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