Determination of the surface band bending in InxGa 1-xN films by hard x-ray photoemission spectroscopy

Science and Technology of Advanced Materials

Volumn 14, Issue 1, 2013, Pages

  Lozac'h, Mickael ^a,b   Ueda, Shigenori ^a   Liu, Shitao ^c   Yoshikawa, Hideki ^a   Liwen, Sang ^a   Wang, Xinqiang ^c   Shen, Bo ^c   Sakoda, Kazuaki ^a,b   Kobayashi, Keisuke ^a   Sumiya, Masatomo ^a,d  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c PEKING UNIVERSITY   (China)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

band bending; core level; GaN; hard x ray photoemission spectroscopy; HX PES; hybridization; InGaN; InN; valence band maximum

Indexed keywords

BANDBENDING; GAN; HARD X-RAY PHOTOEMISSION SPECTROSCOPY; HX-PES; HYBRIDIZATION; INGAN; INN; VALENCE-BAND MAXIMUMS;

BINDING ENERGY; CONDUCTION BANDS; CORE LEVELS; METALLIC FILMS; PHOTOELECTRON SPECTROSCOPY; VALENCE BANDS;

X RAYS;

EID: 84875407211     PISSN: 14686996     EISSN: None     Source Type: Journal    
DOI: 10.1088/1468-6996/14/1/015007     Document Type: Article

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