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Applied Physics Express

Volumn 2, Issue 9, 2009, Pages

Photovoltaic action in polyaniline/n-GaN Schottky diodes

(5) Matsuki, Nobuyuki a Irokawa, Yoshihiro a Matsui, Takuya b Kondo, Michio b Sumiya, Masatomo a

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AIR MASS; APPLIED BIAS; EXTERNAL QUANTUM EFFICIENCY; GAN FILM; REVERSE LEAKAGE CURRENT; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; SHORTER WAVELENGTH; SOLAR SIMULATOR; TRANSPARENT CONDUCTING ELECTRODES;

CONDUCTIVE FILMS; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; PHOTOVOLTAIC CELLS; POLYANILINE; SEMICONDUCTING GALLIUM;

SCHOTTKY BARRIER DIODES;

EID: 70349139153 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.2.092201 Document Type: Article

Times cited : (18)

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