Band structures of wurtzite InN and Ga1-xInxN by all-electron GW calculation

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 3 B, 2004, Pages

  Usuda, Manabu ^a   Hamada, Noriaki ^b   Shiraishi, Kenji ^c   Oshiyama, Atsushi ^c  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Bandgap; GW calculation; InN

Indexed keywords

BAND STRUCTURE; CRYSTALS; DIELECTRIC HEATING; ENERGY GAP; HEAT CONDUCTION; LATTICE CONSTANTS; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY;

FULL-POTENTIAL LINEARIZED AUGMENTED-PLANE-WAVE (FLAPW) METHOD; LOCAL-DENSITY APPROXIMATION (LDA);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 2442433630     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l407     Document Type: Article

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