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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 8 A, 2004, Pages

Intrinsic valence band study of molecular-beam-epitaxy-grown GaAs and GaN by high-resolution hard X-ray photoemission spectroscopy

(11) Kobayashi, Keisuke a Takata, Yasutaka b Yamamoto, Tetsuya c Kim, Jung Jin d Makino, Hisao e Tamasaku, Kenji b Yabashi, Makina a Miwa, Daigo b Ishikawa, Tetsuya b Shin, Shik b Yao, Takafumi d,e

a JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE (Japan)

b RIKEN/SPring 8 ^* (Japan)

c KOCHI UNIVERSITY OF TECHNOLOGY (Japan)

d TOHOKU UNIVERSITY (Japan)

e TOHOKU UNIVERSITY (Japan)

Author keywords

Electronic structure; GaAs; GaN; Lda calculation; MBE; Valence band; X ray photoemission spectroscopy

Indexed keywords

CRYSTAL GROWTH; ELECTRONIC STRUCTURE; GROUND STATE; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; STRUCTURE (COMPOSITION); X RAY PHOTOELECTRON SPECTROSCOPY;

INELASTIC SCATTERING; INTRINSIC CORE; LDA CALCULATION; VALENCE BAND;

GALLIUM NITRIDE;

EID: 5144225476 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.43.L1029 Document Type: Article

Times cited : (34)

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