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Applied Physics Letters

Volumn 95, Issue 7, 2009, Pages

Dephasing of Si spin qubits due to charge noise

(3) Culcer, Dimitrie a Hu, Xuedong a,b,c Das Sarma, S a,b

a Bldg 142 (United States)

b UNIVERSITY OF MARYLAND (United States)

c UNIVERSITY AT BUFFALO (United States)

Author keywords

[No Author keywords available]

Indexed keywords

1/F NOISE; BARRIER POTENTIAL; CHARGE NOISE; CHARGE TRAP; COHERENCE TIME; DECOHERENCE; DEPHASING; DOUBLE QUANTUM DOTS; GATE ERRORS; HETEROSTRUCTURES; QUANTUM DOT ARRAYS; QUANTUM-DOT CONFINEMENTS; RANDOM TELEGRAPH NOISE; REALISTIC MODEL; SILICON QUANTUM DOTS; SINGLET-TRIPLET; SPIN DEPHASING; SPIN QUBIT; SPIN-QUBITS; SUBMICRON;

ERRORS; OPTICAL WAVEGUIDES; QUANTUM OPTICS; SILICON; SILICON WAFERS; SPIN FLUCTUATIONS; TELEGRAPH;

SEMICONDUCTOR QUANTUM DOTS;

EID: 69249191571 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3194778 Document Type: Article

Times cited : (146)

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