Mono- and few-layer nanocrystalline graphene grown on Al2O 3(0 0 0 1) by molecular beam epitaxy

Carbon

Volumn 56, Issue , 2013, Pages 339-350

  Oliveira Jr , Myriano H ^a   Schumann, Timo ^a   Gargallo Caballero, Raquel ^a   Fromm, Felix ^b   Seyller, Thomas ^b,c   Ramsteiner, Manfred ^a   Trampert, Achim ^a   Geelhaar, Lutz ^a   Lopes, Joao Marcelo J ^a   Riechert, Henning ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON EVAPORATION; CONTROLLED GROWTH; DEGREE OF CRYSTALLINITY; INSULATING SUBSTRATES; NANO-CRYSTALLINE FILMS; STRUCTURAL QUALITIES; SUBSTRATE SURFACE; TRANSPORT MEASUREMENTS;

CARBON FILMS; DIAMOND FILMS; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; PHOTOELECTRONS; RAMAN SPECTROSCOPY; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

GRAPHENE;

EID: 84875211809     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2013.01.032     Document Type: Article

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