Graphene growth on h-BN by molecular beam epitaxy

Solid State Communications

Volumn 152, Issue 12, 2012, Pages 975-978

  Garcia, Jorge M ^a,b   Wurstbauer, Ulrich ^b   Levy, Antonio ^b   Pfeiffer, Loren N ^c   Pinczuk, Aron ^b   Plaut, Annette S ^d   Wang, Lei ^b   Dean, Cory R ^b   Buizza, Roberto ^b   Van Der Zande, Arend M ^b   Hone, James ^b   Watanabe, Kenji ^e   Taniguchi, Takashi ^e  

^a INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

^b Columbia University ^*  (United States)

^c Princeton University   (United States)

^d UNIVERSITY OF EXETER   (United Kingdom)

^e NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

A. Graphene; B. Molecular beam epitaxy; C. AFM; C. Raman spectroscopy

Indexed keywords

AFM; CARBON ATOMS; GRAPHENE GROWTH; GRAPHENE LAYERS; HEXAGONAL BORON NITRIDE (H-BN); HIGH MOBILITY; INCIDENT FLUX; MICROSCOPE IMAGES; NANOMETER SIZE; OPTICAL PHONONS; RAMAN MAPS; SINGLE LAYER; SOLID CARBON SOURCES; SUBSTRATE TEMPERATURE; VAN DER WAALS EPITAXY;

ACCIDENTS; ATOMS; BORON NITRIDE; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SUBSTRATES; VAN DER WAALS FORCES;

GRAPHENE;

EID: 84860713213     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2012.04.005     Document Type: Article

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