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Volumn 520, Issue 6, 2012, Pages 2096-2101
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Changes in the structural and electrical properties of vacuum post-annealed tungsten- and titanium-doped indium oxide films deposited by radio frequency magnetron sputtering
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Author keywords
Annealing; Doped oxides; Electrical properties; Electron mobility; Indium oxides; Sputtering; Structural properties; Transparent conducting oxides
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Indexed keywords
ANNEALING TEMPERATURES;
AS-DEPOSITED FILMS;
CRYSTALLINE NATURE;
CRYSTALLINITIES;
DEPOSITION POWER;
DOPED OXIDES;
ELECTRICAL PROPERTY;
INDIUM OXIDES;
LOW BANDGAP;
POST ANNEALING;
RADIO FREQUENCY MAGNETRON SPUTTERING;
RF-POWER;
ROOM TEMPERATURE;
STRUCTURAL AND ELECTRICAL PROPERTIES;
TITANIUM-DOPED INDIUM OXIDE;
TRANSPARENT CONDUCTING OXIDE;
TRANSPARENT CONDUCTIVE OXIDES;
VISIBLE AND NEAR INFRARED;
AMORPHOUS FILMS;
ANNEALING;
CRYSTALLINE MATERIALS;
ELECTRIC PROPERTIES;
ELECTRON MOBILITY;
ELECTRONS;
INDIUM;
MAGNETRON SPUTTERING;
RADIO;
RADIO WAVES;
SPUTTERING;
STRUCTURAL PROPERTIES;
TITANIUM;
TITANIUM OXIDES;
TUNGSTEN;
VACUUM;
OXIDE FILMS;
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EID: 84855910874
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2011.08.060 Document Type: Article |
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Times cited : (30)
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References (18)
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