Performance enhancement mechanisms of passivated InN/GaN-heterostructured ion-selective field-effect-transistor pH sensors

Sensors and Actuators, B: Chemical

Volumn 181, Issue , 2013, Pages 810-815

  Lee, Ching Ting ^a   Chiu, Ying Shuo ^a   Wang, Xin Qiang ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b PEKING UNIVERSITY   (China)

Author keywords

InN GaN heterostructure; Ion selective field effect transistors (ISFETs); pH sensors; Photoelectrochemical (PEC) method; Selectivity coefficients

Indexed keywords

ELECTRON CONCENTRATION; ION-SELECTIVE FIELD-EFFECT-TRANSISTORS (ISFETS); PASSIVATION TREATMENT; PERFORMANCE ENHANCEMENTS; PHOTOELECTROCHEMICAL METHOD (PEC); SELECTIVITY COEFFICIENT; SENSITIVITY PARAMETERS; SURFACE STATES DENSITY;

FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; IONS; PASSIVATION; PH; SURFACE STATES;

PH SENSORS;

EID: 84875130176     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2013.02.080     Document Type: Article

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