HfO2 and ZrO2-based microchemical ion sensitive field effect transistor (ISFET) sensors: Simulation experiment

Journal of the Electrochemical Society

Volumn 158, Issue 10, 2011, Pages

  Jankovic, V ^a   Chang, J P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATIVE APPROACH; CONTINUITY EQUATIONS; ELECTRONEUTRALITY; METAL OXIDE DIELECTRICS; NON-LINEAR; OXIDE SEMICONDUCTOR; PH RESPONSE; PH SENSITIVITY; POINT OF ZERO CHARGE; SIMULATION EXPERIMENTS; WIDE PH RANGE;

DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM OXIDES; ION SENSITIVE FIELD EFFECT TRANSISTORS; IONS; METALLIC COMPOUNDS; PH SENSORS; SENSORS; SILICON COMPOUNDS; TRANSISTORS; ZIRCONIUM ALLOYS;

PH EFFECTS;

EID: 80052086786     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3623421     Document Type: Article

References (8)

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