Fabrication of GaN epitaxial thin film on InGaZnO4 single-crystalline buffer layer

Thin Solid Films

Volumn 518, Issue 11, 2010, Pages 2996-2999

  Shinozaki, Tomomasa ^a   Nomura, Kenji ^b   Katase, Takayoshi ^a   Kamiya, Toshio ^a,b   Hirano, Masahiro ^a,b   Hosono, Hideo ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

GaN; Homologous series compounds; Lattice matched buffer layer; Reactive solid phase epitaxial

Indexed keywords

BAND-EDGE PHOTOLUMINESCENCE; EPITAXIAL RELATIONSHIPS; EPITAXIAL THIN FILMS; GAN BUFFER LAYERS; GAN CRYSTALS; GAN FILM; HOMOLOGOUS SERIES; HOMOLOGOUS SERIES COMPOUNDS; IN-PLANE; IN-PLANE ORIENTATION; LATTICE-MATCHED; LOW TEMPERATURES; OUT-OF-PLANE; OXIDE CRYSTALS; OXIDE SUBSTRATES; SINGLE-CRYSTALLINE; SOLID-PHASE; TWISTING ANGLE; ZNO;

BUFFER LAYERS; CRYSTAL GROWTH; CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; EPITAXIAL FILMS; EPITAXIAL LAYERS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTICAL WAVEGUIDES; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 77649121561     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.10.131     Document Type: Article

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