Use of annealed low-temperature grown GaAs as a selective photoetch-stop layer

Applied Physics Letters

Volumn 68, Issue 12, 1996, Pages 1678-1680

  Chen, E H ^a   McInturff, D T ^a   Chin, T P ^a   Melloch, M R ^a   Woodall, J M ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DIFFUSION; ELECTROLYTES; ETCHING; GAS LASERS; INTERFACES (MATERIALS); OHMIC CONTACTS; PH EFFECTS; QUANTUM EFFICIENCY; SEMICONDUCTOR DOPING;

CARRIER TRANSPORT; ETCH RATE SELECTIVITY; HELIUM CADMIUM LASERS; PHOTOETCH STOP LAYER; PHOTON ENERGY; POTASSIUM HYDROXIDE; SCHOTTKY BARRIERS; WAVELENGTH;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030109032     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115903     Document Type: Article

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