Study on pHpzc and surface potential of tin oxide gate ISFET

Materials Chemistry and Physics

Volumn 59, Issue 1, 1999, Pages 6-11

  Liao, Hung Kwei ^a   Chi, Li Lun ^a   Chou, Jung Chuan ^b   Chung, Wen Yaw ^a   Sun, Tai Ping ^c   Hsiung, Shen Kan ^a  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^b NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c Chungyu Institute of Technology   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; CURVE FITTING; INTERFACES (MATERIALS); PH EFFECTS; SEMICONDUCTING TIN COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS;

CAPACITANCE VOLTAGE MEASUREMENTS; SURFACE POTENTIAL; TIN OXIDE;

GATES (TRANSISTOR);

EID: 0032658248     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(99)00033-4     Document Type: Article

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