SCOPUS 정보 검색 플랫폼

Volumn 102, Issue 10, 2013, Pages

Ferroelectric memristor based on Pt/BiFeO3/Nb-doped SrTiO 3 heterostructure

(9) Hu, Zhongqiang a,d Li, Qian b Li, Meiya a Wang, Qiangwen a Zhu, Yongdan a Liu, Xiaolian a Zhao, Xingzhong a Liu, Yun b Dong, Shuxiang c

a WUHAN UNIVERSITY (China)

b AUSTRALIAN NATIONAL UNIVERSITY (Australia)

c PEKING UNIVERSITY (China)

d ARGONNE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPLETION REGION; FERROELECTRIC POLARIZATION; MEMRISTIVE BEHAVIOR; MODULATION EFFECTS; POTENTIAL BARRIERS; RESISTIVE SWITCHING BEHAVIORS; ROOM TEMPERATURE; VOLTAGE PULSE;

MEMRISTORS; PASSIVE FILTERS; RESISTORS; SEMICONDUCTOR JUNCTIONS; STRONTIUM TITANATES;

FERROELECTRICITY;

EID: 84875123554 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4795145 Document Type: Article

Times cited : (155)

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