SCOPUS 정보 검색 플랫폼

Volumn 100, Issue 25, 2012, Pages

Potential barrier increase due to Gd doping of BiFeO 3 layers in Nb:SrTiO 3-BiFeO 3-Pt structures displaying diode-like behavior

(5) Khassaf, H a Ibanescu, G A b Pintilie, I b Misirlioglu, I B a Pintilie, L b

a SABANCI UNIVERSITY (Turkey)

b NATIONAL INSTITUTE OF MATERIALS PHYSICS (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT CONCENTRATIONS; NEGATIVE POLARITY; P-TYPE CONDUCTION; PARTIAL COMPENSATION; POTENTIAL BARRIERS; RECTIFYING PROPERTIES;

GADOLINIUM; IRON OXIDES; NUCLEAR PHYSICS; PLATINUM; STRONTIUM TITANATES; THERMIONIC EMISSION;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84863309047 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4729816 Document Type: Article

Times cited : (20)

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