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Volumn 100, Issue 25, 2012, Pages

Epitaxial growth and capacitance-voltage characteristics of BiFeO 3/CeO 2/yttria-stabilized zirconia/Si(001) heterostructure

(8) Hu, Zhongqiang a Li, Meiya a Zhu, Yongdan a Pu, Shizhou a Liu, Xiaolian a Sebo, Bobby a Zhao, Xingzhong a Dong, Shuxiang b

a WUHAN UNIVERSITY (China)

b PEKING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VALUES; CAPACITANCE VOLTAGE CHARACTERISTIC; CLOCKWISE HYSTERESIS LOOP; EPITAXIAL RELATIONSHIPS; INSULATING LAYERS; MEMORY WINDOW; MULTIFERROICS; OUT-OF-PLANE; RETENTION PROPERTIES; SI (001) SUBSTRATE; STABILIZED ZIRCONIA;

DEGRADATION; EPITAXIAL FILMS; EPITAXIAL GROWTH; PULSED LASER DEPOSITION; SILICON; YTTRIUM ALLOYS; ZIRCONIA;

YTTRIA STABILIZED ZIRCONIA;

EID: 84863332113 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4730621 Document Type: Article

Times cited : (14)

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