Photovoltaic effects in BiFeO3

Applied Physics Letters

Volumn 95, Issue 6, 2009, Pages

  Yang, S Y ^a   Martin, L W ^b   Byrnes, S J ^b,c   Conry, T E ^a,b   Basu, S R ^a   Paran, D ^a   Reichertz, L ^b   Ihlefeld, J ^d   Adamo, C ^d   Melville, A ^d   Chu, Y H ^e   Yang, C H ^c   Musfeldt, J L ^f   Schlom, D G ^d   Ager, J W ^b   Ramesh, R ^a,b,c  

^a Lawrence Berkeley National Laboratory   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d Cornell University   (United States)

^e NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^f UNIVERSITY OF TENNESSEE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND OFFSETS; EXTERNAL QUANTUM EFFICIENCY; FERROELECTRIC POLARIZATION; MAXIMUM EFFICIENCY; OPEN-CIRCUIT VOLTAGES; ORDER OF MAGNITUDE; OXIDE HETEROSTRUCTURES; TIN DOPED INDIUM OXIDE;

ELECTRIC POTENTIAL; FERROELECTRICITY; INDIUM; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING INDIUM COMPOUNDS; TIN;

SEMICONDUCTING BISMUTH COMPOUNDS;

EID: 69049089851     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3204695     Document Type: Article

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