Control growth of silicon nanocolumns' epitaxy on silicon nanowires

Journal of Nanoparticle Research

Volumn 15, Issue 4, 2013, Pages

  Chong, Su Kong ^a   Dee, Chang Fu ^b   Yahya, Noorhana ^c   Rahman, Saadah Abdul ^a  

^a UNIVERSITY OF MALAYA   (Malaysia)

^b INSTITUTE OF MICROENGINEERING AND NANOELECTRONICS IMEN   (Malaysia)

^c DEPARTMENT OF CHEMICAL ENGINEERING   (Malaysia)

Author keywords

Epitaxy; Hot wire chemical vapor deposition; Nanowires; Silicon nanocolumns

Indexed keywords

ASPECT RATIO; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; FLOW OF GASES; GROWTH RATE; NANOWIRES; NITROGEN COMPOUNDS; OPTICAL PROPERTIES;

ANTI-REFLECTION; DEPOSITION TIME; EPITAXIALLY GROWN; GROWTH PROCESS; HOT WIRE CHEMICAL VAPOR DEPOSITION; SILICON NANO-COLUMNS; SILICON NANOWIRES; SINGLE-CRYSTALLINE;

SILICON;

HYDROGEN; INDIUM; NANOWIRE; OXIDE; SILANE; SILICON;

ARTICLE; CRYSTAL; FLOW RATE; GAS FLOW; GROWTH RATE; PRIORITY JOURNAL; VAPOR;

EID: 84874931795     PISSN: 13880764     EISSN: 1572896X     Source Type: Journal    
DOI: 10.1007/s11051-013-1571-z     Document Type: Article

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