Residual stress and dislocations density in silicon ribbons grown via optical zone melting

Journal of Applied Physics

Volumn 113, Issue 8, 2013, Pages

  Augusto, A ^a   Pera, D ^a   Choi, H J ^b,d   Bellanger, P ^a   Brito, M C ^c   Maia Alves, J ^a   Vallera A M ^a   Buonassisi, T ^b   Serra, J M ^a  

^a UNIVERSITY OF LISBON   (Portugal)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c UNIVERSITY OF LISBON   (Portugal)

^d Kookmin University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BIREFRINGENCE IMAGING; COMPUTATIONAL FLUID DYNAMICS MODELING; DISLOCATION DENSITIES; DISLOCATIONS DENSITIES; ELECTRICAL PERFORMANCE; MICROSTRUCTURE MEASUREMENTS; SPATIALLY RESOLVED; TIME-TEMPERATURE PROFILE;

COMPUTATIONAL FLUID DYNAMICS; METALLURGY; SILICON; SILICON WAFERS; SOLIDS; TEMPERATURE CONTROL; ZONE MELTING;

RESIDUAL STRESSES;

EID: 84874906136     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4793319     Document Type: Article

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