In-plane residual stress and its relationship to dislocation density in polycrystalline (EFG) silicon sheet

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4

Volumn 2, Issue , 2006, Pages 1429-1432

  Li, F ^a   Garcia, V ^a   Danyluk, S ^a   Ostapenko, S ^b   Kalejs, J ^c   Yates, D ^d  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY OF SOUTH FLORIDA   (United States)

^c JPK Consulting

^d SCHOTT Solar

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOVOLTAIC EFFECTS; POLYSILICON; SILICON WAFERS; SOLAR CELLS;

DISLOCATION DENSITY; FILM FED GROWTH (EFG);

RESIDUAL STRESSES;

EID: 41749090008     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/WCPEC.2006.279721     Document Type: Conference Paper

References (4)

1. K. Ramesh, "Digital photoelasticity advanced techniques and applications", Springer-Velag, New York, 2000.
2. S. He and S. Danyluk, "Residual Stress Characterization for Solar Cells by Infrared Polariscopy", National Center for Photovoltaics and Solar Program Review Meeting, Denver Colorado, 2003.
3. T. Zheng and S. Danyluk, "Nondestructive measurement of in plane residual stress in thin silicon substrates by infrared transmission", Matl. Evaluation, vol 50, no 10, Oct 2001, pp 1227-1233
4. S. He, T. Zheng and S. Danyluk, "Analysis and determination of stress-optic coefficient of thin single crystal silicon samples" Journal of applied physics, vol 96, number 6, 15 Dec 2004, pp3103-3109