Analysis and determination of the stress-optic coefficients of thin single crystal silicon samples

Journal of Applied Physics

Volumn 96, Issue 6, 2004, Pages 3103-3109

  He, S ^a   Zheng, T ^a   Danyluk, S ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ANISOTROPY; NEAR INFRARED (NIR); PHOTELASTIC RETARDATION; STRESS-OPTIC COEFFICIENTS;

ANISOTROPY; ERROR ANALYSIS; IRRADIATION; MATHEMATICAL MODELS; PHOTOELASTICITY; RESIDUAL STRESSES; SILICON; STRESS ANALYSIS; TENSORS;

SINGLE CRYSTALS;

EID: 4944242979     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1774259     Document Type: Article

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