New method of fabricating silicon wafer for the photovoltaic application based on sintering and recrystallization steps

Journal of Crystal Growth

Volumn 359, Issue 1, 2012, Pages 92-98

  Bellanger, P ^a,b   Sow, A ^b,e   Grau, M ^a,b   Augusto, A ^c   Serra, J M ^c   Kaminski, A ^b,f   Dubois, S ^d   Straboni, A ^b  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b Pole des Éco industries   (France)

^c UNIVERSITY OF LISBON   (Portugal)

^d INES/Savoie Technolac   (France)

^e UNIVERSITÉ DE POITIERS   (France)

^f IMEP LAHC   (France)

Author keywords

A1. Recrystallization; A1. Sintering; B3. Solar cells substrate

Indexed keywords

ELECTRICAL CHARACTERIZATION; IMPURITY CONTENT; P-TYPE DOPING; PHOTOVOLTAIC APPLICATIONS; PHOTOVOLTAIC SOLAR CELLS; RECRYSTALLIZATION PROCESS; SOLAR CELL FABRICATION; ZONE MELTING RECRYSTALLIZATION;

AUTOMOBILE MANUFACTURE; CONVERSION EFFICIENCY; NANOSTRUCTURED MATERIALS; RECRYSTALLIZATION (METALLURGY); SINTERING; SOLAR CELLS;

SILICON WAFERS;

EID: 84866023346     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.07.050     Document Type: Article

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