Evaluation of Vce monitoring as a real-time method to estimate aging of bond wire-IGBT modules stressed by power cycling

IEEE Transactions on Industrial Electronics

Volumn 60, Issue 7, 2013, Pages 2760-2770

  Smet, Vanessa ^a   Forest, François ^a   Huselstein, Jean Jacques ^a   Rashed, Amgad ^a   Richardeau, Frédéric ^b  

^a UNIV MONTPELLIER   (France)

^b Laboratoire Plasma et Conversion d'Energie   (France)

Author keywords

Bond wire aging; IGBT modules; power cycling; real time monitoring

Indexed keywords

TESTING;

BOND WIRE; ELECTRONIC POWER CONVERTERS; IGBT-MODULES; INSULATED GATE BIPOLAR TRANSISTOR MODULES; POWER CYCLING; REAL TIME MONITORING; REAL-TIME SUPERVISION; SEMICONDUCTOR POWER DEVICES;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 84874866585     PISSN: 02780046     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIE.2012.2196894     Document Type: Article

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