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Volumn 58, Issue 7, 2011, Pages 2706-2714

Analysis of clamped inductive turnoff failure in railway traction IGBT power modules under overload conditions

Author keywords

Insulated gate bipolar transistor (IGBT) power module; power inverter reliability; railway applications; semiconductor device breakdown; semiconductor device thermal factors

Indexed keywords

INSULATED-GATE BIPOLAR TRANSISTOR (IGBT) POWER MODULE; POWER INVERTERS; RAILWAY APPLICATIONS; SEMICONDUCTOR DEVICE BREAKDOWN; SEMICONDUCTOR DEVICE THERMAL FACTORS;

EID: 79959289978     PISSN: 02780046     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIE.2010.2077613     Document Type: Article
Times cited : (48)

References (39)
  • 1
    • 34548696868 scopus 로고    scopus 로고
    • Revisiting power cycling test for better life-time prediction in traction
    • DOI 10.1016/j.microrel.2007.07.099, PII S0026271407003642
    • M. Mermet-Guyennet, X. Perpiñà, and M. Piton, "Revisiting power cycling test for better lifetime prediction in traction," Microelectron. Reliab., vol. 47, no. 9-11, pp. 1690-1695, Sep.-Nov. 2007. (Pubitemid 47418084)
    • (2007) Microelectronics Reliability , vol.47 , Issue.SPEC. ISS. , pp. 1690-1695
    • Mermet-Guyennet, M.1    Perpina, X.2    Piton, M.3
  • 3
    • 4043052854 scopus 로고    scopus 로고
    • Direct self-control and synchronous pulse techniques for high-power traction inverters in comparison
    • Aug.
    • A. Steimel, "Direct self-control and synchronous pulse techniques for high-power traction inverters in comparison," IEEE Trans. Ind. Electron., vol. 51, no. 4, pp. 810-820, Aug. 2004.
    • (2004) IEEE Trans. Ind. Electron. , vol.51 , Issue.4 , pp. 810-820
    • Steimel, A.1
  • 5
    • 60449103355 scopus 로고    scopus 로고
    • Power electronics and motor drives recent progress and perspective
    • Apr.
    • B. K. Bose, "Power electronics and motor drives recent progress and perspective," IEEE Trans. Ind. Electron., vol. 56, no. 2, pp. 581-588, Apr. 2006.
    • (2006) IEEE Trans. Ind. Electron. , vol.56 , Issue.2 , pp. 581-588
    • Bose, B.K.1
  • 8
    • 34548736004 scopus 로고    scopus 로고
    • Thermal fatigue effects on the temperature distribution inside IGBT modules for zone engine aeronautical applications
    • DOI 10.1016/j.microrel.2007.07.093, PII S002627140700306X
    • T. Lhommeau, X. Perpiñà, C. Martin, R. Meuret, M. Mermet-Guyennet, and M. Karama, "Thermal fatigue effects on the temperature distribution inside IGBT modules for zone engine aeronautical applications," Microelectron. Reliab., vol. 47, no. 9-11, pp. 1779-1783, Sep.-Nov. 2007. (Pubitemid 47432668)
    • (2007) Microelectronics Reliability , vol.47 , Issue.SPEC. ISS. , pp. 1779-1783
    • Lhommeau, T.1    Perpina, X.2    Martin, C.3    Meuret, R.4    Mermet-Guyennet, M.5    Karama, M.6
  • 9
    • 34548677751 scopus 로고    scopus 로고
    • Failure-relevant abnormal events in power inverters considering measured IGBT module temperature inhomogeneities
    • Sep.-Nov.
    • X. Perpiñà, A. Castellazzi, M. Piton, M. Mermet-Guyennet, and J.Millán, "Failure-relevant abnormal events in power inverters considering measured IGBT module temperature inhomogeneities," Microelectron. Reliab., vol. 47, no. 9-11, pp. 1784-1785, Sep.-Nov. 2007.
    • (2007) Microelectron. Reliab. , vol.47 , Issue.9-11 , pp. 1784-1785
    • Perpiñà, X.1    Castellazzi, A.2    Piton, M.3    Mermet-Guyennet, M.4    Millán, J.5
  • 10
    • 0036540853 scopus 로고    scopus 로고
    • Selected failure mechanisms of modern power modules
    • DOI 10.1016/S0026-2714(02)00042-2, PII S0026271402000422
    • M. Ciappa, "Selected failure mechanisms of modern power modules," Microelectron. Reliab., vol. 42, no. 4/5, pp. 653-667, Apr./May 2002. (Pubitemid 34498209)
    • (2002) Microelectronics Reliability , vol.42 , Issue.4-5 , pp. 653-667
    • Ciappa, M.1
  • 11
    • 0028445714 scopus 로고
    • A novel scheme for protection of power semiconductor devices against short circuit faults
    • Jun.
    • A. K. Khargekar and P. P. Kumar, "A novel scheme for protection of power semiconductor devices against short circuit faults," IEEE Trans. Ind. Electron., vol. 41, no. 3, pp. 344-351, Jun. 1994.
    • (1994) IEEE Trans. Ind. Electron. , vol.41 , Issue.3 , pp. 344-351
    • Khargekar, A.K.1    Kumar, P.P.2
  • 12
    • 72949084951 scopus 로고
    • A discussion of some known physical models for second breakdown
    • Nov.
    • F. Weitzsch, "A discussion of some known physical models for second breakdown," IEEE Trans. Electron Devices, vol. ED-13, no. 11, pp. 731- 734, Nov. 1966.
    • (1966) IEEE Trans. Electron Devices , vol.ED-13 , Issue.11 , pp. 731-734
    • Weitzsch, F.1
  • 13
    • 0003277507 scopus 로고
    • Current mode second breakdown in epitaxial planar transistors
    • Nov.
    • H. B. Grutchfield and T. J. Moutoux, "Current mode second breakdown in epitaxial planar transistors," IEEE Trans. Electron Devices, vol. ED-13, no. 11, pp. 743-748, Nov. 1966.
    • (1966) IEEE Trans. Electron Devices , vol.ED-13 , Issue.11 , pp. 743-748
    • Grutchfield, H.B.1    Moutoux, T.J.2
  • 14
    • 11544327960 scopus 로고
    • Thermal breakdown in silicon p-n junction devices
    • Nov.
    • B. S. Khurana and T. Sugano, "Thermal breakdown in silicon p-n junction devices," IEEE Trans. Electron Devices, vol. ED-13, no. 11, pp. 763-770, Nov. 1966.
    • (1966) IEEE Trans. Electron Devices , vol.ED-13 , Issue.11 , pp. 763-770
    • Khurana, B.S.1    Sugano, T.2
  • 15
    • 0016652448 scopus 로고
    • Effect of injected current on current-mode second breakdown in Silicon PNN + structure
    • Dec.
    • K. Hane and T. Suzuki, "Effect of injected current on current-mode second breakdown in Silicon PNN + structure," Jpn. J. Appl. Phys., vol. 14, no. 12, pp. 1961-1968, Dec. 1975.
    • (1975) Jpn. J. Appl. Phys. , vol.14 , Issue.12 , pp. 1961-1968
    • Hane, K.1    Suzuki, T.2
  • 18
    • 0026168678 scopus 로고
    • Analytical model for the destruction mechanism of GTO-like devices by avalanche injection
    • Jun.
    • G. K. Wachutka, "Analytical model for the destruction mechanism of GTO-like devices by avalanche injection," IEEE Trans. Electron Devices, vol. 38, no. 6, pp. 1516-1523, Jun. 1991.
    • (1991) IEEE Trans. Electron Devices , vol.38 , Issue.6 , pp. 1516-1523
    • Wachutka, G.K.1
  • 19
    • 0037381389 scopus 로고    scopus 로고
    • Dynamic avalanche and reliability of high voltage diodes
    • Apr.
    • J. Lutz andM. Domeij, "Dynamic avalanche and reliability of high voltage diodes," Microelectron. Reliab., vol. 48, no. 4, pp. 529-536, Apr. 2003.
    • (2003) Microelectron. Reliab. , vol.48 , Issue.4 , pp. 529-536
    • Lutz, J.1    Domeij, M.2
  • 20
    • 0038732707 scopus 로고    scopus 로고
    • On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche
    • Feb.
    • M. Domeij, J. Lutz, and D. Silber, "On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche," IEEE Trans. Electron Devices, vol. 50, no. 2, pp. 486-493, Feb. 2003.
    • (2003) IEEE Trans. Electron Devices , vol.50 , Issue.2 , pp. 486-493
    • Domeij, M.1    Lutz, J.2    Silber, D.3
  • 21
    • 0033640299 scopus 로고    scopus 로고
    • Current filamentation in bipolar power devices during dynamic avalanche breakdown
    • DOI 10.1016/S0038-1101(99)00209-9
    • J. Oetjen, R. Jungblut, U. Kuhlmann, J. Arkenau, and R. Sitting, "Current filamentation in bipolar power devices during dynamic avalanche breakdown," Solid State Electron., vol. 44, no. 1, pp. 117-123, Jan. 2000. (Pubitemid 32213070)
    • (2000) Solid-State Electronics , vol.44 , Issue.1 , pp. 117-123
    • Oetjen, J.1    Jungblut, R.2    Kuhlmann, U.3    Arkenau, J.4    Sittig, R.5
  • 22
    • 0000245547 scopus 로고
    • Avalanche characteristics and failure mechanism of high voltage diodes
    • Nov.
    • H. Egawa, "Avalanche characteristics and failure mechanism of high voltage diodes," IEEE Trans. Electron Devices, vol. ED-13, no. 11, pp. 754- 758, Nov. 1966.
    • (1966) IEEE Trans. Electron Devices , vol.ED-13 , Issue.11 , pp. 754-758
    • Egawa, H.1
  • 23
    • 0032777935 scopus 로고    scopus 로고
    • Failure mechanisms of IGBT's under shortcircuit and clamped inductive switching stress
    • Jan.
    • M. Trivedi and K. Shenai, "Failure mechanisms of IGBT's under shortcircuit and clamped inductive switching stress," IEEE Trans. Power Electron., vol. 14, no. 1, pp. 108-116, Jan. 1999.
    • (1999) IEEE Trans. Power Electron. , vol.14 , Issue.1 , pp. 108-116
    • Trivedi, M.1    Shenai, K.2
  • 24
    • 77950014912 scopus 로고    scopus 로고
    • Limitation of the short-circuit ruggedness of high-voltage IGBTs
    • Barcelona, Spain Jun.
    • A. Kopta, M. Rahimo, U. Schlapbach, N. Kaminski, and D. Silber, "Limitation of the short-circuit ruggedness of high-voltage IGBTs," in Proc. ISPSD, Barcelona, Spain, Jun. 2009, pp. 33-36.
    • (2009) Proc. ISPSD , pp. 33-36
    • Kopta, A.1    Rahimo, M.2    Schlapbach, U.3    Kaminski, N.4    Silber, D.5
  • 25
    • 0033877923 scopus 로고    scopus 로고
    • Failure dynamics of the IGBT during turn-off for unclamped inductive loading conditions
    • DOI 10.1109/28.833780
    • C. C. Shen, A. R. Hefner, Jr., D. W. Berning, and J. B. Bernstein, "Failure dynamics of the IGBT during turnoff under unclamped inductive loading conditions," IEEE Trans. Ind. Appl., vol. 36, no. 2, pp. 614-624, Mar./Apr. 2000. (Pubitemid 30593832)
    • (2000) IEEE Transactions on Industry Applications , vol.36 , Issue.2 , pp. 614-624
    • Shen, C.-C.1    Hefner Jr., A.R.2    Bernstein, J.B.3    Berning, D.W.4
  • 26
    • 79959301383 scopus 로고
    • Second breakdown and latch-up behavior of IGBT's
    • Brighton, U.K. Sep.
    • K. Heumann and M. Quenum, "Second breakdown and latch-up behavior of IGBT's," in Proc. EPE, Brighton, U.K., Sep. 1993, vol. 4, pp. 301-305.
    • (1993) Proc. EPE , vol.4 , pp. 301-305
    • Heumann, K.1    Quenum, M.2
  • 28
    • 0030674985 scopus 로고    scopus 로고
    • Improvement of the diode characteristics using emitter-controlled principles (EMCON diode)
    • Weimar, Germany, May
    • A. Porst, F. Auerbach, H. Brunner, G. Deboy, and F. Hille, "Improvement of the diode characteristics using emitter-controlled principles (EMCON diode)," in Proc. ISPSD, Weimar, Germany, May 1997, pp. 213-216.
    • (1997) Proc. ISPSD , pp. 213-216
    • Porst, A.1    Auerbach, F.2    Brunner, H.3    Deboy, G.4    Hille, F.5
  • 29
    • 67749103847 scopus 로고    scopus 로고
    • Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PTIGBT)
    • Sep.
    • P. Lefranc, D. Planson, H. Morel, and D. Bergogne, "Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PTIGBT)," Solid State Electron., vol. 53, no. 9, pp. 944-954, Sep. 2009.
    • (2009) Solid State Electron. , vol.53 , Issue.9 , pp. 944-954
    • Lefranc, P.1    Planson, D.2    Morel, H.3    Bergogne, D.4
  • 30
    • 0036049674 scopus 로고    scopus 로고
    • Investigations on the stability of dynamic avalanche in IGBTs
    • Santa Fe, NM, Jun.
    • P. Rose, D. Silber, A. Porst, and F. Pfirsch, "Investigations on the stability of dynamic avalanche in IGBTs," in Proc. ISPSD, Santa Fe, NM, Jun. 2002, pp. 165-168.
    • (2002) Proc. ISPSD , pp. 165-168
    • Rose, P.1    Silber, D.2    Porst, A.3    Pfirsch, F.4
  • 31
    • 1942487835 scopus 로고    scopus 로고
    • Turn-off switching analysis considering dynamic avalanche effect for low turn-off loss highvoltage IGBTs
    • Apr.
    • T. Ogura, H. Ninomiya, K. Sugiyama, and T. Inoue, "Turn-off switching analysis considering dynamic avalanche effect for low turn-off loss highvoltage IGBTs," IEEE Trans. Electron Devices, vol. 51, no. 4, pp. 629- 635, Apr. 2004.
    • (2004) IEEE Trans. Electron Devices , vol.51 , Issue.4 , pp. 629-635
    • Ogura, T.1    Ninomiya, H.2    Sugiyama, K.3    Inoue, T.4
  • 32
    • 0035272707 scopus 로고    scopus 로고
    • Freewheeling diode reverse-recovery failure modes in IGBT applications
    • DOI 10.1109/28.913734, PII S0093999401024951
    • M. T. Rahimo and N. Y. A. Shammas, "Freewheeling diode reverserecovery failure modes in IGBT applications," IEEE Trans. Ind. Appl., vol. 37, no. 2, pp. 661-670, Mar./Apr. 2001. (Pubitemid 32407303)
    • (2001) IEEE Transactions on Industry Applications , vol.37 , Issue.2 , pp. 661-670
    • Rahimo, M.T.1    Shammas, N.Y.A.2
  • 33
    • 53649087979 scopus 로고    scopus 로고
    • Use of accurate chip level modeling and analysis of a power module to establish reliability rules
    • Montreal, QC, Canada, Jul.
    • R. De Maglie, G. Lourdel, P. Austin, J.-M. Dienot, J.-L. Schanen, and J.-L. Sanchez, "Use of accurate chip level modeling and analysis of a power module to establish reliability rules," in Proc. ISIE, Montreal, QC, Canada, Jul. 2006, pp. 1571-1576.
    • (2006) Proc. ISIE , pp. 1571-1576
    • De Maglie, R.1    Lourdel, G.2    Austin, P.3    Dienot, J.-M.4    Schanen, J.-L.5    Sanchez, J.-L.6
  • 34
    • 33748041125 scopus 로고    scopus 로고
    • Compact modelling and analysis of power-sharing unbalances in IGBT-modules used in traction applications
    • DOI 10.1016/j.microrel.2006.07.055, PII S0026271406001995, Proceedings of the 17th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
    • A. Castellazzi, M. Ciappa, W. Fichtner, G. Lourdel, and M. Mermet-Guyennet, "Compact modelling and analysis of powersharing unbalances in IGBT-modules used in traction applications," Microelectron. Reliab., vol. 46, no. 9-11, pp. 1754-1759, Sep.-Nov. 2006. (Pubitemid 44294694)
    • (2006) Microelectronics Reliability , vol.46 , Issue.9-11 , pp. 1754-1759
    • Castellazzi, A.1    Ciappa, M.2    Fichtner, W.3    Lourdel, G.4    Mermet-Guyennet, M.5
  • 36
    • 0031148194 scopus 로고    scopus 로고
    • Problems related to the avalanche and secondary breakdown of silicon p-n junction
    • PII S0026271496002521
    • T. Puritis, "Problems related to the avalanche and secondary breakdown of silicon P-N junctions," Microelectron. Reliab., vol. 35, no. 5, pp. 713- 719, May 1997. (Pubitemid 127409639)
    • (1997) Microelectronics Reliability , vol.37 , Issue.5 , pp. 713-719
    • Puritis, T.1
  • 37
    • 79959304581 scopus 로고    scopus 로고
    • Synopsys Mountain View CA. [Online]. Available
    • TCAD TOOL Suite. Synopsys, Mountain View, CA, 2006. [Online]. Available: http://www.synopsys.com/products/tcad/tcad.html
    • (2006)
  • 38
    • 0012954950 scopus 로고
    • Microplasmas in silicon
    • Jan.
    • D. J. Rose, "Microplasmas in silicon," Phys. Rev., vol. 105, no. 2, pp. 413-418, Jan. 1957.
    • (1957) Phys. Rev. , vol.105 , Issue.2 , pp. 413-418
    • Rose, D.J.1


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