PECVD silicon nitride passivation of Algan/Gan heterostructures

IEEE Transactions on Electron Devices

Volumn 60, Issue 3, 2013, Pages 1082-1087

  Gatabi, Iman Rezanezhad ^a   Johnson, Derek W ^a   Woo, Jung Hwan ^a   Anderson, Jonathan W ^b   Coan, Mary R ^b   Piner, Edwin L ^b   Harris, Harlan Rusty ^c  

^a Department of Electrical and Computer Engineering   (United States)

^b TEXAS STATE UNIVERSITY   (United States)

^c KENNEDY SPACE CENTER   (United States)

Author keywords

Gallium nitride; passivation; piezoelectric polarization; spontaneous polarization

Indexed keywords

2-D ELECTRON GAS (2DEG); AL MOLE FRACTIONS; ALGAN; ALGAN/GAN HETEROSTRUCTURES; BARRIER LAYERS; PASSIVATION LAYER; PECVD SILICON NITRIDE; PIEZOELECTRIC POLARIZATIONS; POST ANNEALING; SPONTANEOUS POLARIZATION EFFECTS; SPONTANEOUS POLARIZATIONS;

ELECTRIC FIELDS; ELECTRON GAS; GALLIUM NITRIDE; OPTIMIZATION; PASSIVATION; POLARIZATION; SILICON NITRIDE;

HETEROJUNCTIONS;

EID: 84874657479     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2242075     Document Type: Article

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