Effect of silicon nitride PECVD growth on AlGaN/GaN HEMT dispersion and breakdown characteristics

Proceedings - Electrochemical Society

Volumn 6, Issue , 2004, Pages 459-464

  Fitch, Robert ^a   Gillespie, James ^a   Via, Dave ^a   Agresta, Don ^a   Jenkins, Thomas ^a   Jessen, Gregg ^a   Moser, Neil ^a   Crespo, Antonio ^a   Dabiran, Amir ^b   Osinsky, Andrea ^b  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b SVT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-VOLTAGE (C-V) MEASUREMENTS; DEVICE BREAKDOWN; DRAIN CURRENT; RF DISPERSION;

ALUMINUM COMPOUNDS; CAPACITANCE; CHEMICAL MODIFICATION; DISPERSIONS; ELECTRIC CONTACTS; ELECTRIC RESISTANCE; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; VOLTAGE CONTROL;

SILICON NITRIDE;

EID: 20144387242     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. V Tilak, B. Green, H. Kim, R. Dimitrov, J. Smart, W.J. Schaff, J.R. Shealy, L.F. Eastman, pp. 357-363, International Symposium on Compound Semiconductors, Monterey, CA (2000).
2. N.Q. Zhang, B. Moran, S.P. DenBaars, U.K. Mishra, X. W. Wang and T.P. Ma, p. 589, International Electron Device Meeting, Washington, DC (2001).
3. P. Javorka, J. Bernat, A. Fox, M. Marso, H. Luth and P. Kordos, Electronics Letters, Vol.39, No.15, pp. 1155-1156 (2003).