A quasi-two-dimensional charge transport model of AlGaN/GaN high electron mobility transistors (HEMTs)

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 28, Issue 4, 2005, Pages 491-499

  Asgari, A ^a   Kalafi, M ^a   Faraone, L ^b  

^a UNIVERSITY OF TABRIZ   (Iran)

^b UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

AlGaN GaN; HFET; Mobility

Indexed keywords

ALUMINUM COMPOUNDS; CHARGE TRANSFER; GALLIUM COMPOUNDS; MATHEMATICAL MODELS; TRANSCONDUCTANCE;

ALGAN/GAN; DRAIN CONDUCTANCE; ELECTRON GAS MOBILITY; HFET; MOBILITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 24144437414     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2005.05.054     Document Type: Article

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