Sheet carrier density enhancement by Si3N4 passivation on nonpolar a -plane (11 2- 0) sapphire grown AlGaNGaN heterostructures

Applied Physics Letters

Volumn 92, Issue 9, 2008, Pages

  Arulkumaran, S ^a   Selvaraj, S Lawrence ^b   Egawa, T ^b   Ng, G I ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ALLOYS; HETEROJUNCTIONS; PASSIVATION; SAPPHIRE;

CRYSTALLINE QUALITY; ELECTRON GAS MOBILITY;

CARRIER CONCENTRATION;

EID: 40549131887     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2857479     Document Type: Article

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