Controlling work function and damaging effects of sputtered RuO2 gate electrodes by changing oxygen gas ratio during sputtering

ACS Applied Materials and Interfaces

Volumn 5, Issue 4, 2013, Pages 1327-1332

  Kim, Hyo Kyeom ^a   Yu, Il Hyuk ^b   Lee, Jae Ho ^b   Park, Tae Joo ^c   Hwang, Cheol Seong ^a,b  

^a Seoul National University   (South Korea)

^b Seoul National University   (South Korea)

^c Hanyang University   (South Korea)

Author keywords

effective work function; high k gate dielectric; metal gate; oxygen ratio; ruthenium oxide; sputtering

Indexed keywords

DIELECTRIC MATERIALS; GATE DIELECTRICS; HAFNIUM OXIDES; HIGH-K DIELECTRIC; REACTIVE SPUTTERING; REFRACTORY METAL COMPOUNDS; SILICA; SPUTTERING; WORK FUNCTION;

EFFECTIVE WORK FUNCTION; HIGH- K GATE DIELECTRICS; METAL GATE; OXYGEN RATIOS; RUTHENIUM OXIDE;

RUTHENIUM COMPOUNDS;

EID: 84874591116     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am302604e     Document Type: Article

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