Effects of O2 gas flow ratio and flow rate on the formation of RuO2 thin films by reactive sputtering

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 3, 2000, Pages 1348-1351

  Abe, Y ^a   Kaga, Y ^a   Kawamura, M ^a   Sasaki, K ^a  

^a KITAMI INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CRYSTAL GROWTH; CRYSTAL STRUCTURE; EMISSION SPECTROSCOPY; FILM GROWTH; OXIDATION; OXYGEN; PLASMA APPLICATIONS; SEMICONDUCTING FILMS; SPUTTER DEPOSITION; THIN FILMS; VAPOR DEPOSITION;

PLASMA EMISSION SPECTROSCOPY; RUTHENIUM DIOXIDE;

RUTHENIUM COMPOUNDS;

EID: 0034350478     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591385     Document Type: Article

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