Nonvolatile metal-oxide-semiconductor capacitors with ru-ruo x composite nanodots embedded in atomic-layer-deposited Al 2O 3 films

Journal of Electronic Materials

Volumn 39, Issue 8, 2010, Pages 1343-1350

  Gou, Hong Yan ^a   Ding, Shi Jin ^a   Huang, Yue ^a   Sun, Qing Qing ^a   Zhang, Wei ^a   Wang, Peng Fei ^a   Chen, Zhenyi ^b  

^a FUDAN UNIVERSITY   (China)

^b SHANGHAI UNIVERSITY   (China)

Author keywords

Atomic layer deposited Al 2O 3; Nonvolatile memory capacitors; Ru RuO x composite nanodots (RONs)

Indexed keywords

A-DENSITY; ATOMIC LAYER DEPOSITED; BLOCKING LAYERS; CHARGE RETENTION; CHARGE STORAGE; MAGNETIC SPUTTERING; MEMORY WINDOW; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; NANODOTS; NON-VOLATILE; NON-VOLATILE MEMORIES; NONVOLATILE MEMORY CAPACITORS; POST DEPOSITION ANNEALING; UNDERLYING MECHANISM;

ALUMINUM; CAPACITANCE; CAPACITORS; RUTHENIUM ALLOYS; RUTHENIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

ATOMS;

EID: 77954622456     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1245-x     Document Type: Article

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