Gate engineering in TiN/La/TiN and TiLaN metal layers on atomic-layer-deposited HfO 2/Si

IEEE Electron Device Letters

Volumn 33, Issue 7, 2012, Pages 955-957

  Kim, Hyo Kyeom ^a   Lee, Sang Young ^b   Yu, Il Hyuk ^b   Park, Tae Joo ^c   Choi, Rino ^d   Hwang, Cheol Seong ^b  

^a Seoul National University   (South Korea)

^b University Semiconductor Research Center   (South Korea)

^c Hanyang University   (South Korea)

^d Inha University   (South Korea)

Author keywords

Lanthanum metal gate; scavenging effect; work function modulation

Indexed keywords

ATOMIC LAYER DEPOSITED; BARRIER LAYERS; EQUIVALENT OXIDE THICKNESS; FLAT-BAND VOLTAGE; GATE METALS; INTERFACIAL LAYER; MAXIMUM TEMPERATURE; METAL GATE; METAL LAYER; METAL STACKS; SCAVENGING EFFECT; WORK FUNCTION MODULATION;

HAFNIUM OXIDES; MODULATION; MOS DEVICES; SILICON; TITANIUM NITRIDE;

METALS;

EID: 84862881905     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2197369     Document Type: Article

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