Thickness dependence of intrinsic dielectric response and apparent interfacial capacitance in ferroelectric thin films

Journal of Applied Physics

Volumn 101, Issue 7, 2007, Pages

  Pertsev, N A ^a,c   Dittmann, R ^a   Plonka, R ^b   Waser, R ^a,b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC RESPONSE; EPITAXIAL FERROELECTRIC THIN FILMS; INTERFACIAL CAPACITANCE; NONFERROELECTRIC INTERFACIAL LAYERS;

CAPACITANCE; DIELECTRIC PROPERTIES; ELECTRODES; EXTRAPOLATION; INTERFACES (MATERIALS); STRAIN RELAXATION;

FERROELECTRIC THIN FILMS;

EID: 34247210710     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2713934     Document Type: Article

References (59)

1. C. Basceri, S. K. Streiffer, A. I. Kingon, and R. Waser, J. Appl. Phys. 82, 2497 (1997).
2. S. K. Stneiffer, C. Basceri, C. B. Parker, S. E. Lash, and A. Kingon, J. Appl. Phys. 86, 4565 (1999).
3. N. Yanase, K. Abe, N. Fukushima, and T. Kawakubo, Jpn. J. Appl. Phys., Part 1 38, 5305 (1999).
4. D. J. Kim, J. Y. Jo, Y. S. Kim, Y. J. Chang, J. S. Lee, J.-G. Yoon, T. K. Song, and T. W. Noh, Phys. Rev. Lett. 95, 237602 (2005).
5. A. K. Thgantsev, M. Landivar, E. Colla, and N. Setter, J. Appl. Phys. 78, 2623 (1995).
6. N. A. Peitsev, J. Rodríguez Contreras, V. G. Kukhar, B. Hermanns, H. Kohlstedt, and R. Waser, Appl. Phys. Lett. 83, 3356 (2003).
7. G. A. Smolenski, and K. S. Rogatschev, Zh. Tekh. Fiz. 27, 1753 (1954);
8. A. D. Hilton and B. W. Ricketts, J. Phys. D 29, 1321 (1996).
9. D. E. Kotecki et al., IBM J. Res. Dev. 43, 367 (1999).
10. P. K. Larsen, J. M. Dormans, D. J. Taylor, and P. J. van Veldhoven, J. Appl. Phys. 76, 2405 (1994).
11. L. J. Sinnamon, R. M. Bowman, and J. M. Gregg, Appl. Phys. Lett. 78, 1724 (2001).
12. C. B. Parker, J.-P. Maria, and A. I. Kingon, Appl. Phys. Lett. 81, 340 (2002).
13. J. McAneney, L. J. Sinnamon, R. M. Bowman, and J. M. Gregg, J. Appl. Phys. 94, 4566 (2003).
14. W. Y. Park, K. H. Ahn, and C. S. Hwang, Appl. Phys. Lett. 83, 4387 (2003).
15. R. Dittmann, R. Plonka, E. Vasco, N. A. Pertsev, J. Q. He, C. L. Jia, S. Hoffmann-Eifert, and R. Waser, Appl. Phys. Lett. 83, 5011 (2003).
16. R. Plonka, R. Dittmann, N. A. Pertsev, E. Vasco, and R. Waser, Appl. Phys. Lett. 86, 202908 (2005).
17. R. Kretschmer and K. Binder, Phys. Rev. B 20, 1065 (1979).
18. W. L. Zhong, B. D. Qu, P. L. Zhang, and Y. G. Wang, Phys. Rev. B 50, 12375 (1994).
19. C. Zhou and D. M. Newns, J. Appl. Phys. 82, 3081 (1997).
20. H. Y. Ku and F. G. Ullman, J. Appl. Phys. 35, 265 (1964).
21. C. T. Black and J. J. Welser, IEEE Trans. Electron Devices 46, 776 (1999).
22. J. Junquera and Ph. Ghosez, Nature (London) 422, 506 (2003);
23. N. Sai, A. M. Kolpak, and A. M. Rappe, Phys. Rev. B 72, 020101(R) (2005).
24. L. J. Sinnamon, R. M. Bowman, and J. M. Gregg, Appl. Phys. Lett. 81, 889 (2002).
25. A. Lookman, R. M. Bowman, J. M. Gregg, J. Kut, M. Dawber, A. Ruediger, and J. F. Scott, J. Appl. Phys. 96, 555 (2004).
26. N. A. Pertsev, A. G. Zembilgotov, and A. K. Tagantsev, Phys. Rev. Lett. 80, 1988 (1998);
27. Ferroelectrics 223, 79 (1999).
28. J. Matthews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974).
29. J. S. Speck and W. Pompe, J. Appl. Phys. 76, 466 (1994).
30. I. P. Barra, P. Würfel, and B. D. Silverman, Phys. Rev. Lett. 30, 384 (1973);
31. Phys. Rev. B 8, 3257 (1973);
32. J. Vac. Sci. Technol. 10, 687 (1973).
33. V. G. Koukhar, N. A. Pertsev, and R. Waser, Phys. Rev. B 64, 214103 (2001).
34. N. A. Pertsev, V. G. Koukhar, R. Waser, and S. Hoffmann, Appl. Phys. Lett. 77, 2596 (2000).
35. V. G. Kukhar, N. A. Pertsev, H. Kohlstedt, and R. Waser, Phys. Rev. B 73, 214103 (2006).
36. R. R. Mehta, B. D. Silverman, and J. T. Jacobs, J. Appl. Phys. 44, 3379 (1973).
37. d follow from the charge and electric-field distributions inside metallic electrodes calculated in the Thomas-Fermi approximation (see, e.g., Ref. 20).
38. T. Mitsui and J. Fumichi. Phys. Rev. 90, 193 (1953).
39. A. M. Bratkovsky and A. P. Levanyuk, Phys. Rev. Lett. 84, 3177 (2000).
40. N. A. Pertsev and H. Kohlstedt, cond-mat/0603762.
41. D. D. Fong et al., Phys. Rev. B 71, 144112 (2005).
42. D. D. Fong et al., Phys. Rev. Lett. 96, 127601 (2006).
43. N. A. Pertsev, V. G. Kukhar, H. Kohlstedt, and R. Waser, Phys. Rev. B 67, 054107 (2003).
44. 6 approximation and the same set of material parameters as in Ref. 38.
45. P. Mokrý, A. K. Tagantsev, and N. Setter, Phys. Rev. B 70, 172107 (2004).
46. Y. L. Li, L. E. Cross, and L. Q. Chen, J. Appl. Phys. 98, 064101 (2005).
47. 2, as expected for electrodes with very good screening properties.
48. The effects caused by field-induced displacements of 180° domain walls, which were described in Ref. 40, are expected to be negligible due to high lattice potential barriers in the discussed perovskite ferroelectrics (see Ref. 30).
49. E. V. Chenskiǐ and V. V. Tarasenko, Sov. Phys. JETP 56, 618 (1982).
50. C. Yoshida, A. Yoshida, and H. Tamura, Appl. Phys. Lett. 75, 1449 (1999).
51. H. B. Michaelson, IBM J. Res. Dev. 22, 72 (1978).
52. 3 electrodes, which can be obtained using the data given in Refs. 4 and 20.
53. G. M. Guro, I. I. Ivanchik, and N. F. Kovtonyuk, Sov. Phys. Solid State 11, 1574 (1970).
54. L. Pintilie and M. Alexe, J. Appl. Phys. 98, 124103 (2005).
55. A. K. Tagantsev, V. O. Sherman, K. F. Astafiev, J. Venkatesh, and N. Setter, J. Electroceram. 11, 5 (2003).
56. W. J. Merz, Phys. Rev. 91, 513 (1953);
57. H.-M. Christen, J. Mannhalt, E. J. Williams, and Ch. Gerber, Phys. Rev. B 49, 12095 (1994);
58. Yu. A. Boikov and T. Claeson, Phys. Solid State 43, 2267 (2001).
59. Y. S. Kim et al., Appl. Phys. Lett. 88, 072909 (2006).