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Chinese Physics Letters

Volumn 30, Issue 2, 2013, Pages

P-type ZnO:N films prepared by thermal oxidation of Zn3N 2

(4) Zhang, Bin a Li, Min a,b Wang, Jian Zhong a Shi, Li Qun a

a FUDAN UNIVERSITY (China)

b Alternative Energy and Power Generation Technology Institute (China)

Author keywords

[No Author keywords available]

Indexed keywords

FILM PREPARATION; II-VI SEMICONDUCTORS; PHOTOELECTRON SPECTROSCOPY; PHOTOLUMINESCENCE; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR DOPING; THERMOOXIDATION; X RAY DIFFRACTION; ZINC OXIDE;

ANNEALING TEMPERATURES; CHEMICAL STATE; CONDUCTION TYPE; LOCAL ENVIRONMENTS; N CONTENT; P TYPE ZNO; P-TYPE; THERMAL-OXIDATION; X RAY PHOTOEMISSION SPECTROSCOPY; ZINC OXYNITRIDE;

METALLIC FILMS;

EID: 84874329198 PISSN: 0256307X EISSN: 17413540 Source Type: Journal
DOI: 10.1088/0256-307X/30/2/027303 Document Type: Article

Times cited : (15)

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