High-quality ZnO thin films prepared by two-step thermal oxidation of the metallic Zn

Journal of Crystal Growth

Volumn 240, Issue 3-4, 2002, Pages 467-472

  Chen, S J ^a   Liu, Y C ^a,b   Ma, J G ^c   Zhao, D X ^b   Zhi, Z Z ^a   Lu, Y M ^b   Zhang, J Y ^b   Shen, D Z ^b   Fan, X W ^b  

^a NORTHEAST NORMAL UNIVERSITY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^c NONE

Author keywords

A1. Crystal structure; A1. Photoluminescence; A1. X ray diffraction; A3. Physical vapor deposition processes; B1. Zinc compounds; B2. Semiconducting II IV materials

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; EVAPORATION; NANOSTRUCTURED MATERIALS; OXIDATION; PHOTOLUMINESCENCE; PHYSICAL VAPOR DEPOSITION; SUBSTRATES; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

THERMAL OXIDATION;

THIN FILMS;

EID: 0036570494     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)00925-9     Document Type: Article

References (12)