Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films

Applied Physics Letters

Volumn 88, Issue 6, 2006, Pages

  Cong, G W ^a   Peng, W Q ^a   Wei, H Y ^a   Han, X X ^a   Wu, J J ^a   Liu, X L ^a   Zhu, Q S ^a   Wang, Z G ^a   Lu, J G ^b   Ye, Z Z ^b   Zhu, L P ^b   Qian, H J ^c   Su, R ^c   Hong, C H ^c   Zhong, J ^c   Ibrahim, K ^c   Hu, T D ^c  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b ZHEJIANG UNIVERSITY   (China)

^c INSTITUTE OF HIGH ENERGY PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER PARAMETERS; VALENCE BAND STRUCTURES;

ALUMINUM ALLOYS; ELECTRON ENERGY LEVELS; FERMI LEVEL; SEMICONDUCTOR DOPING;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 32444445852     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2171804     Document Type: Article

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