Enhancement of near-band edge photoluminescence of ZnO thin films by employing MgF2 buffer layer

Journal of Crystal Growth

Volumn 290, Issue 2, 2006, Pages 334-337

  Hong, Ruijin ^a,b   Shao, Jianda ^a   He, Hongbo ^a   Fan, Zhengxiu ^a  

^a SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

A3. Physical vapor deposition; B1. Oxides; B2. Semiconducting II VI materials

Indexed keywords

MAGNESIUM COMPOUNDS; OPACITY; PHOTOLUMINESCENCE; PHYSICAL VAPOR DEPOSITION; RESIDUAL STRESSES; X RAY DIFFRACTION; ZINC OXIDE;

ABSORPTION MEASUREMENTS; LATTICE MISMATCH; SEMICONDUCTING II-VI MATERIALS;

THIN FILMS;

EID: 33646376695     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.01.047     Document Type: Article

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