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Applied Physics Letters

Volumn 99, Issue 7, 2011, Pages

Understanding the intermediate initial state in TiO2-δ/ La2/3Sr1/3MnO3 stack-based bipolar resistive switching devices

(9) Chen, Y S a,b Chen, B a Gao, B a Chen, L P a Lian, G J a Liu, L F a Wang, Y a Liu, X Y a Kang, J F a

a PEKING UNIVERSITY (China)

b INSTITUTE OF PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE FABRICATIONS; INITIAL STATE; INTERMEDIATE STATE; RECOMBINATION MECHANISMS; RESISTIVE STATE; RESISTIVE SWITCHING; TIO; VACANCY FORMATION;

MANGANESE OXIDE; OXYGEN VACANCIES; PHOTOELECTRON SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

SWITCHING SYSTEMS;

EID: 80052089337 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3626597 Document Type: Article

Times cited : (17)

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