Defect engineering: Reduction effect of hydrogen atom impurities in HfO 2-based resistive-switching memory devices

Nanotechnology

Volumn 23, Issue 32, 2012, Pages

  Kim, Seonghyun ^a   Lee, Daeseok ^b   Park, Jubong ^a   Jung, Seungjae ^a   Lee, Wootae ^a   Shin, Jungho ^a   Woo, Jiyong ^b   Choi, Godeuni ^b   Hwang, Hyunsang ^a,b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT CONDITIONS; DEFECT ENGINEERING; DEVICE PERFORMANCE; FAST SWITCHING; HIGH PRESSURE HYDROGEN; HYDROGEN ATOMS; IMPURITIES IN; OXYGEN IONS; RANDOM ACCESS MEMORIES; REDUCTION EFFECTS; RESISTIVE SWITCHING MEMORIES; SWITCHING CHARACTERISTICS;

DEFECTS; HAFNIUM OXIDES; HYDROGEN;

SWITCHING;

EID: 84864411409     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/32/325702     Document Type: Article

References (25)

1. International Technology Roadmap for Semiconductors 2011 edn www.itrs.net
2. Waser R, Dittmann R, Staikov G and Szot K 2009 Adv. Mater. 21 2632-63
3. Baek I G et al 2005 IEDM Tech. Dig. 750-3
4. Sawa A 2008 Mater. Today 11 28-36 (Pubitemid 351680723)
5. Seo S et al 2004 Appl. Phys. Lett. 85 5655 (Pubitemid 40162553)
6. Kim K M, Jeong D S and Hwang C S 2011 Nanotechnology 22 254002
7. Chien W C et al 2010 IEEE Electron Device Lett. 31 671
8. Lee M-J et al 2011 Nature Mater. 10 625-30
9. Lee H Y, Chen P S, Wu T Y, Chen Y S, Wang C C, Tzeng P J, Lin C H, Chen F, Lien C H and Tsai M-J 2008 IEDM Tech. Dig. 297-300
10. Lee J et al 2010 IEDM Tech. Dig. 452-5
11. Gao B et al 2009 IEEE Symp. VLSI Tech. Dig. 30
12. Kim S, Jo M, Jung S, Choi H, Lee J, Chang M, Cho C and Hwang H 2011 Microelectron. Eng. 88 273-5
13. Al-Kuhaili M, Durrani S, Bakhtiari I, Dastageer M and Mekki M 2011 Mater. Chem. Phys. 126 515-23
14. Nunes P, Malik A, Fernandes B, Vilarinho P and Martins R 1999 Vacuum 52 45
15. Park S-G, Magyari-Köpe B and Nishi Y 2011 IEEE Electron Device Lett. 32 197-9
16. Dittmann R, Muenstermann R, Krug I, Park D, Menke T, Mayer J, Besmehn A, Kronast F, Schneider C and Waser R 2012 Proc. IEEE 100 1979-90
17. Houssa M, Gendt S De, Autran J L, Groesenken G and Heyns M M 2004 Appl. Phys. Lett. 85 2101
18. Li N, Suzuki M, Abe Y, Kawamura M, Sasaki K, Itoh H and Suzuki T 2012 Sol. Energy Mater. Sol. Cells 99 160-5
19. Abe Y, Hosono H and Ohta Y 1988 Phys. Rev. B 38 10166
20. Noguchi D, Kawamata Y and Nagatomo T 2003 Japan. J. Appl. Phys. 42 5255-8
21. Hackely J and Gougousi T 2009 Thin Solid Films 517 6576-83
22. Yu S and Wong H-S 2010 IEEE Electron Device Lett. 31 1455-7
23. Kim Y and Lee J 2008 J. Appl. Phys. 104 114115
24. Yu S, Guan X and Wong H-S P 2011 IEDM Tech. Dig. 413-6
25. Goux L, Chen Y Y, Pantisano L, Wang X P, Groeseneken G, Jurczak M and Wouters D J 2010 Electrochem. Solid State Lett. 13 G54-6