Voltage-induced switching in magnetic tunnel junctions with perpendicular magnetic anisotropy

Journal of Physics D: Applied Physics

Volumn 46, Issue 8, 2013, Pages

  Wang, W G ^a,b   Chien, C L ^a  

^a JOHNS HOPKINS UNIVERSITY   (United States)

^b University of Arizona   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LARGE CURRENT DENSITY; LOW CURRENT DENSITY; LOW-RESISTANCE STATE; MAGNETIC TUNNEL JUNCTION; METALLIC FERROMAGNETS; PERPENDICULAR MAGNETIC ANISOTROPY; SITE-SPECIFIC; SPIN POLARIZED CURRENTS; SPINTRONIC DEVICE; ULTRA-FAST; ULTRA-LOW POWER CONSUMPTION; VOLTAGE DEPENDENCE; VOLTAGE PULSE; VOLTAGE-CONTROLLED;

ELECTRIC FIELDS; ELECTRIC POTENTIAL; MAGNETIC ANISOTROPY; MAGNETOELECTRONICS;

MAGNETIC DEVICES;

EID: 84873744006     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/46/7/074004     Document Type: Article

References (79)

1. Wolf S A, Awschalom D D, Buhrman R A, Daughton J M, von Molnár S, Roukes M L, Chtchelkanova A Y and Treger D M 2001 Spintronics: a spin-based electronics vision for the future Science 294 1488-95
2. Zutic I, Fabian J and Das Sarma S 2004 Spintronics: fundamentals and applications Rev. Mod. Phys. 76 323
3. Fert A 2008 Nobel Lecture: Origin, development, and future of spintronics Rev. Mod. Phys. 80 1517-30
4. Grünberg P A 2008 Nobel Lecture: From spin waves to giant magnetoresistance and beyond Rev. Mod. Phys. 80 1531-40
5. Moodera J S, Kinder L R, Wong T M and Meservey R 1995 Large magnetoresistance at room-temperature in ferromagnetic thin-film tunnel-junctions Phys. Rev. Lett. 74 3273-6
6. Miyazaki T and Tezuka N 1995 Giant magnetic tunneling effect in Fe/Al2 O3 /Fe junction J. Magn. Magn. Mater. 139 L231-4
7. Slonczewski J C 1996 Current-driven excitation of magnetic multilayers J. Magn. Magn. Mater. 159 L1-7
8. Berger L 1996 Emission of spin waves by a magnetic multilayer traversed by a current Phys. Rev. B 54 9353-8
9. Gallagher W J and Parkin S S P 2006 Development of the magnetic tunnel junction MRAM at IBM: from first junctions to a 16-Mb MRAM demonstrator chip IBM J. Res. Dev. 50 5-23
10. Zhu J G, Zheng Y F and Prinz G A 2000 Ultrahigh density vertical magnetoresistive random access memory (invited) J. Appl. Phys. 87 6668-73
11. Parkin S S P et al 1999 Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited) J. Appl. Phys. 85 5828-33
12. Ralph D C and Stiles M D 2008 Spin transfer torques J. Magn. Magn. Mater. 320 1190-216
13. Sun J Z and Ralph D C 2008 Magnetoresistance and spin-transfer torque in magnetic tunnel junctions J. Magn. Magn. Mater. 320 1227-37
14. Sun J Z 2006 Spin angular momentum transfer in current-perpendicular nanomagnetic junctions IBM J. Res. Dev. 50 81-100
15. Wang W-G, Li M, Hageman S and Chien C L 2012 Electric-field-assisted switching in magnetic tunnel junctions Nature Mater. 11 64
16. Parkin S S P, Kaiser C, Panchula A, Rice P M, Hughes B, Samant M and Yang S H 2004 Giant tunnelling magnetoresistance at room temperature with MgO (1 0 0) tunnel barriers Nature Mater. 3 862-7
17. Yuasa S, Nagahama T, Fukushima A, Suzuki Y and Ando K 2004 Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions Nature Mater. 3 868-71
18. Butler W H, Zhang X-G, Schulthess T C and MacLaren J M 2001 Spin-dependent tunneling conductance of Fe|MgO|Fe sandwiches Phys. Rev. B 63 054416
19. Mathon J and Umerski A 2001 Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe(0 0 1) junction Phys. Rev. B 63 220403
20. Ikeda S, Hayakawa J, Ashizawa Y, Lee Y M, Miura K, Hasegawa H, Tsunoda M, Matsukura F and Ohno H 2008 Tunnel magnetoresistance of 604% at 300 K by suppression of Ta diffusion in CoFeB/MgO/CoFeB pseudo-spin-valves annealed at high temperature Appl. Phys. Lett. 93 082508
21. Zhang X G and Butler W H 2004 Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunnel junctions Phys. Rev. B 70 172407
22. Wang W G et al 2009 In situ characterization of rapid crystallization of amorphous CoFeB electrodes in CoFeB/MgO/CoFeB junctions during thermal annealing Appl. Phys. Lett. 95 242501
23. Wang W G et al 2010 Understanding tunneling magnetoresistance during thermal annealing in MgO-based junctions with CoFeB electrodes Phys. Rev. B 81 144406
24. Wang W G, Ni C, Rumaiz A, Wang Y, Fan X, Moriyama T, Cao R, Wen Q Y, Zhang H W and Xiao J Q 2008 Real-time evolution of tunneling magnetoresistance during annealing in CoFeB/MgO/CoFeB magnetic tunnel junctions Appl. Phys. Lett. 92 152501
25. Wang W-G, Hageman S, Li M, Huang S, Kou X, Fan X, Xiao J Q and Chien C L 2011 Rapid thermal annealing study of magnetoresistance and perpendicular anisotropy in magnetic tunnel junctions based on MgO and CoFeB Appl. Phys. Lett. 99 102502
26. Choi Y S, Nagamine Y, Tsunekawa K, Maehara H, Djayaprawira D D, Yuasa S and Ando K 2007 Effect of Ta getter on the quality of MgO tunnel barrier in the polycrystalline CoFeB/MgO/CoFeB magnetic tunnel junction Appl. Phys. Lett. 90 012505
27. Gallagher W J et al 1997 Microstructured magnetic tunnel junctions (invited) J. Appl. Phys. 81 3741-6
28. Blamire M G, Aziz A and Robinson J W A 2011 Nanopillar junctions Phil. Trans. R. Soc. A 369 3198-213
29. Wang W-G, Pearse A, Li M, Hageman S and Chien C L Fabrication of magnetic tunnel junction nanopillars by nanosphere lithography. Unpublished
30. Haynes C L and Van Duyne R P 2001 Nanosphere lithography: a versatile nanofabrication tool for studies of size-dependent nanoparticle optics J. Phys. Chem. B 105 5599-611
31. Hanarp P, Sutherland D S, Gold J and Kasemo B 2003 Control of nanoparticle film structure for colloidal lithography Colloids Surf. A 214 23-36
32. Vogel N, Weiss C K and Landfester K 2012 From soft to hard: the generation of functional and complex colloidal monolayers for nanolithography Soft Matter 8 4044-61
33. Choi Y S, Tsunekawa K, Nagamine Y and Djayaprawira D 2007 Transmission electron microscopy study on the polycrystalline CoFeB/MgO/CoFeB based magnetic tunnel junction showing a high tunneling magnetoresistance, predicted in single crystal magnetic tunnel junction J. Appl. Phys. 101 013907
34. Djayaprawira D D, Tsunekawa K, Nagai M, Maehara H, Yamagata S, Watanabe N, Yuasa S, Suzuki Y and Ando K 2005 230% room-temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions Appl. Phys. Lett. 86 092502
35. Ikeda S, Miura K, Yamamoto H, Mizunuma K, Gan H D, Endo M, Kanai S, Hayakawa J, Matsukura F and Ohno H 2010 A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction Nature Mater. 9 721-4
36. Spaldin N A and Fiebig M 2005 The renaissance of magnetoelectric multiferroics Science 309 391-2
37. Hur N, Park S, Sharma P A, Ahn J S, Guha S and Cheong S-W 2004 Electric polarization reversal and memory in a multiferroic material induced by magnetic fields Nature 429 392-5
38. Ohno H, Chiba D, Matsukura F, Omiya T, Abe E, Dietl T, Ohno Y and Ohtani K 2000 Electric-field control of ferromagnetism Nature 408 944-6
39. He X, Wang Y, Wu N, Caruso A N, Vescovo E, Belashchenko K D, Dowben P A and Binek C 2010 Robust isothermal electric control of exchange bias at room temperature Nature Mater. 9 579-85
40. Chu Y-H et al 2008 Electric-field control of local ferromagnetism using a magnetoelectric multiferroic Nature Mater. 7 478-82
41. Lou J, Liu M, Reed D, Ren Y H and Sun N X 2009 Giant electric field tuning of magnetism in novel multiferroic FeGaB/lead zinc niobate-lead titanate (PZN-PT) heterostructures Adv. Mater. 21 4711-5
42. Weisheit M, Fahler S, Marty A, Souche Y, Poinsignon C and Givord D 2007 Electric field-induced modification of magnetism in thin-film ferromagnets Science 315 349-51
43. Maruyama T et al 2009 Large voltage-induced magnetic anisotropy change in a few atomic layers of iron Nature Nanotechnol. 4 158
44. Gamble S J, Burkhardt M H, Kashuba A, Allenspach R, Parkin S S P, Siegmann H C and Stöhr J 2009 Electric field induced magnetic anisotropy in a ferromagnet Phys. Rev. Lett. 102 217201
45. Ha S-S, Kim N-H, Lee S, You C-Y, Shiota Y, Maruyama T, Nozaki T and Suzuki Y 2010 Voltage induced magnetic anisotropy change in ultrathin Fe80 Co20 /MgO junctions with Brillouin light scattering Appl. Phys. Lett. 96 142512
46. Nozaki T, Shiota Y, Shiraishi M, Shinjo T and Suzuki Y 2010 Voltage-induced perpendicular magnetic anisotropy change in magnetic tunnel junctions Appl. Phys. Lett. 96 022506
47. Endo M, Kanai S, Ikeda S, Matsukura F and Ohno H 2010 Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40 Fe40 B20 /Ta structures Appl. Phys. Lett. 96 212503
48. Tsujikawa M and Oda T 2009 Finite electric field effects in the large perpendicular magnetic anisotropy surface Pt/Fe/Pt(0 0 1): a first-principles study Phys. Rev. Lett. 102 247203
49. Duan C-G, Velev J P, Sabirianov R F, Zhu Z, Chu J, Jaswal S S and Tsymbal E Y 2008 Surface magnetoelectric effect in ferromagnetic metal films Phys. Rev. Lett. 101 137201
50. Niranjan M K, Duan C-G, Jaswal S S and Tsymbal E Y 2010 Electric field effect on magnetization at the Fe/MgO(0 0 1) interface Appl. Phys. Lett. 96 222504
51. Nakamura K, Shimabukuro R, Fujiwara Y, Akiyama T, Ito T and Freeman A J 2009 Giant modification of the magnetocrystalline anisotropy in transition-metal monolayers by an external electric field Phys. Rev. Lett. 102 187201
52. Shimabukuro R, Nakamura K, Akiyama T and Ito T 2010 Electric field effects on magnetocrystalline anisotropy in ferromagnetic Fe monolayers Physica E 42 1014-7
53. Tsujikawa M, Haraguchi S, Oda T, Miura Y and Shirai M 2011 A comparative ab initio study on electric-field dependence of magnetic anisotropy in MgO/Fe/Pt and MgO/Fe/Au films J. Appl. Phys. 109 07C107
54. He K H, Chen J S and Feng Y P 2011 First principles study of the electric field effect on magnetization and magnetic anisotropy of FeCo/MgO(0 0 1) thin film Appl. Phys. Lett. 99 072503
55. Bruno P 1989 Tight-binding approach to the orbital magnetic moment and magnetocrystalline anisotropy of transition-metal monolayers Phys. Rev. B 39 865-8
56. Weller D, Stöhr J, Nakajima R, Carl A, Samant M G, Chappert C, Mégy R, Beauvillain P, Veillet P and Held G A 1995 Microscopic origin of magnetic anisotropy in Au/Co/Au probed with x-ray magnetic circular dichroism Phys. Rev. Lett. 75 3752-5
57. Xu L and Zhang S 2012 Electric field control of interface magnetic anisotropy J. Appl. Phys. 111 07C501
58. Shiota Y, Nozaki T, Bonell F, Murakami S, Shinjo T and Suzuki Y 2012 Induction of coherent magnetization switching in a few atomic layers of FeCo using voltage pulses Nature Mater. 11 39-43
59. Monso S, Rodmacq B, Auffret S, Casali G, Fettar F, Gilles B, Dieny B and Boyer P 2002 Crossover from in-plane to perpendicular anisotropy in Pt/CoFe/AlOx sandwiches as a function of Al oxidation: a very accurate control of the oxidation of tunnel barriers Appl. Phys. Lett. 80 4157-9
60. Park J-H, Park C, Jeong T, Moneck M T, Nufer N T and Zhu J-G 2008 Co/Pt multilayer based magnetic tunnel junctions using perpendicular magnetic anisotropy J. Appl. Phys. 103 07A917-913
61. Yakushiji K, Saruya T, Kubota H, Fukushima A, Nagahama T, Yuasa S and Ando K 2010 Ultrathin Co/Pt and Co/Pd superlattice films for MgO-based perpendicular magnetic tunnel junctions Appl. Phys. Lett. 97 232508
62. Yoshikawa M, Kitagawa E, Nagase T, Daibou T, Nagamine M, Nishiyama K, Kishi T and Yoda H 2008 Tunnel magnetoresistance over 100% in MgO-based magnetic tunnel junction films with perpendicular magnetic L10-FePt electrodes IEEE Trans. Magn. Magn. 44 2573-6
63. Zhang S 1999 Spin-dependent surface screening in ferromagnets and magnetic tunnel junctions Phys. Rev. Lett. 83 640-3
64. Mangin S, Ravelosona D, Katine J A, Carey M J, Terris B D and Fullerton E E 2006 Current-induced magnetization reversal in nanopillars with perpendicular anisotropy Nature Mater. 5 210-5
65. Ohmori H, Hatori T and Nakagawa S 2008 Perpendicular magnetic tunnel junction with tunneling magnetoresistance ratio of 64% using MgO (1 0 0) barrier layer prepared at room temperature J. Appl. Phys. 103 07A911
66. Meng H, Sbiaa R, Akhtar M A K, Liu R S, Naik V B and Wang C C 2012 Electric field effects in low resistance CoFeB-MgO magnetic tunnel junctions with perpendicular anisotropy Appl. Phys. Lett. 100 122405
67. Seki T, Kohda M, Nitta J and Takanashi K 2011 Coercivity change in an FePt thin layer in a Hall device by voltage application Appl. Phys. Lett. 98 212505
68. Kita K, Abraham D W, Gajek M J and Worledge D C 2012 Electric-field- control of magnetic anisotropy of Co0.6 Fe0.2 B0.2 /oxide stacks using reduced voltage J. Appl. Phys. 112 033919
69. Bauer U, Emori S and Beach G S D 2012 Electric field control of domain wall propagation in Pt/Co/GdOx films Appl. Phys. Lett. 100 192408
70. Parkes D E, Cavill S A, Hindmarch A T, Wadley P, McGee F, Staddon C R, Edmonds K W, Campion R P, Gallagher B L and Rushforth A W 2012 Non-volatile voltage control of magnetization and magnetic domain walls in magnetostrictive epitaxial thin films Appl. Phys. Lett. 101 072402
71. Schellekens A J, van den Brink A, Franken J H, Swagten H J M and Koopmans B 2012 Electric-field control of domain wall motion in perpendicularly magnetized materials Nature Commun. 3 847
72. Chiba D, Kawaguchi M, Fukami S, Ishiwata N, Shimamura K, Kobayashi K and Ono T 2012 Electric-field control of magnetic domain-wall velocity in ultrathin cobalt with perpendicular magnetization Nature Commun. 3 888
73. Chiba D, Fukami S, Shimamura K, Ishiwata N, Kobayashi K and Ono T 2011 Electrical control of the ferromagnetic phase transition in cobalt at room temperature Nature Mater. 10 853-6
74. Shimamura K, Chiba D, Ono S, Fukami S, Ishiwata N, Kawaguchi M, Kobayashi K and Ono T 2012 Electrical control of Curie temperature in cobalt using an ionic liquid film Appl. Phys. Lett. 100 122402
75. Tsymbal E Y, Mryasov O N and LeClair P R 2003 Spin-dependent tunnelling in magnetic tunnel junctions J. Phys.: Condens. Matter 15 R109-42
76. Kanai S, Yamanouchi M, Ikeda S, Nakatani Y, Matsukura F and Ohno H 2012 Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction Appl. Phys. Lett. 101 122403
77. Zhu J et al 2012 Voltage-Induced ferromagnetic resonance in magnetic tunnel junctions Phys. Rev. Lett. 108 197203
78. Nozaki T et al 2012 Electric-field-induced ferromagnetic resonance excitation in an ultrathin ferromagnetic metal layer Nature Phys 8 492-7
79. Shiota Y, Miwa S, Nozaki T, Bonell F, Mizuochi N, Shinjo T, Kubota H, Yuasa S and Suzuki Y 2012 Pulse voltage-induced dynamic magnetization switching in magnetic tunneling junctions with high resistance-area product Appl. Phys. Lett. 101 102406