In-situ characterization of rapid crystallization of amorphous CoFeB electrodes in CoFeB/MgO/CoFeB junctions during thermal annealing

Applied Physics Letters

Volumn 95, Issue 24, 2009, Pages

  Wang, W G ^a   Jordan Sweet, J ^b   Miao, G X ^c   Ni, C ^a   Rumaiz, A K ^d   Shah, L R ^a   Fan, X ^a   Parsons, P ^a   Stearrett, R ^a   Nowak, E R ^a   Moodera, J S ^c   Xiao, J Q ^a  

^a UNIVERSITY OF DELAWARE   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^d BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS COFEB; COFEB FILM; EFFECTIVE ACTIVATION ENERGY; EPITAXY MODES; HIGH-TEMPERATURE ANNEALING; IN-SITU; IN-SITU CHARACTERIZATION; JOHNSON-MEHL-AVRAMI MODEL; LAYER-BY-LAYER GROWTH; MAGNETIC TUNNEL JUNCTION; RAPID CRYSTALLIZATION; SMALL GRAINS; THERMAL-ANNEALING; TIME-RESOLVED; TIME-SCALES;

ACTIVATION ENERGY; COBALT COMPOUNDS; CRYSTALLIZATION; ELECTRODES; EPITAXIAL GROWTH; FILM GROWTH; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

TUNNEL JUNCTIONS;

EID: 77949754256     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3273397     Document Type: Article

References (26)

1. J. S. Moodera, L. R. Kinder, T. M. Wong, and R. Meservey, Phys. Rev. Lett. PRLTAO 0031-9007 74, 3273 (1995). 10.1103/PhysRevLett.74.3273
2. T. Miyazaki and N. Tezuka, J. Magn. Magn. Mater. JMMMDC 0304-8853 139, L231 (1995).
3. S. Yuasa and D. D. Djayaprawira, J. Phys. D JPAPBE 0022-3727 40, R337 (2007). 10.1088/0022-3727/40/21/R01
4. W. Shen, B. D. Schrag, M. J. Carter, and G. Xiao, Appl. Phys. Lett. APPLAB 0003-6951 93, 033903 (2008). 10.1063/1.2963970
5. W. J. Gallagher and S. S. P. Parkin, IBM J. Res. Dev. IBMJAE 0018-8646 50, 5 (2006).
6. W. H. Butler, X. -G. Zhang, T. C. Schulthess, and J. M. MacLaren, Phys. Rev. B PRBMDO 0163-1829 63, 054416 (2001). 10.1103/PhysRevB.63.054416
7. J. Mathon and A. Umerski, Phys. Rev. B PRBMDO 0163-1829 63, 220403 (2001). 10.1103/PhysRevB.63.220403
8. S. Yuasa, T. Nagahama, A. Fukushima, Y. Suzuki, and K. Ando, Nature Mater. NMAACR 1476-1122 3, 868 (2004). 10.1038/nmat1257
9. S. S. P. Parkin, C. Kaiser, A. Panchula, P. M. Rice, B. Hughes, M. Samant, and S. H. Yang, Nature Mater. NMAACR 1476-1122 3, 862 (2004). 10.1038/nmat1256
10. S. Ikeda, J. Hayakawa, Y. Ashizawa, Y. M. Lee, K. Miura, H. Hasegawa, M. Tsunoda, F. Matsukura, and H. Ohno, Appl. Phys. Lett. APPLAB 0003-6951 93, 082508 (2008). 10.1063/1.2976435
11. S. S. Lau, J. Vac. Sci. Technol. JVSTAL 0022-5355 15, 1656 (1978). 10.1116/1.569824
12. M. von Allmen, S. S. Lau, J. W. Mayer, and W. F. Tseng, Appl. Phys. Lett. APPLAB 0003-6951 35, 280 (1979). 10.1063/1.91071
13. Y. M. Lee, J. Hayakawa, S. Ikeda, F. Matsukura, and H. Ohno, Appl. Phys. Lett. APPLAB 0003-6951 89, 042506 (2006). 10.1063/1.2234720
14. P. W. T. Pong, M. Schmoueli, F. Li, and W. F. Egelhoff, J. Appl. Phys. JAPIAU 0021-8979 103, 07E937 (2008). 10.1063/1.2837618
15. J. Y. Bae, W. C. Lim, H. J. Kim, T. D. Lee, K. W. Kim, and T. W. Kim, J. Appl. Phys. JAPIAU 0021-8979 99, 08T316 (2006). 10.1063/1.2170591
16. J. J. Cha, J. C. Read, W. F. Egelhoff, Jr., P. Y. Huang, H. W. Tseng, Y. Li, R. A. Buhrman, and D. A. Muller, Appl. Phys. Lett. APPLAB 0003-6951 95, 032506 (2009). 10.1063/1.3184766
17. W. G. Wang, C. Ni, A. Rumaiz, Y. Wang, X. Fan, T. Moriyama, R. Cao, Q. Y. Wen, H. W. Zhang, and J. Q. Xiao, Appl. Phys. Lett. APPLAB 0003-6951 92, 152501 (2008). 10.1063/1.2903147
18. M. Sutton, Y. S. Yang, J. Mainville, J. L. Jordan-Sweet, K. F. Ludwig, and G. B. Stephenson, Phys. Rev. Lett. PRLTAO 0031-9007 62, 288 (1989). 10.1103/PhysRevLett.62.288
19. L. A. Clevenger, R. A. Roy, C. Cabral, K. L. Saenger, S. Brauer, G. Morales, K. F. Ludwig, G. Gifford, J. Bucchignano, J. Jordansweet, P. Dehaven, and G. B. Stephenson, J. Mater. Res. JMREEE 0884-2914 10, 2355 (1995). 10.1557/JMR.1995.2355
20. Y. Z. Liu, W. G. Wang, T. Moriyama, J. Q. Xiao, and Z. Zhang, Phys. Rev. B PRBMDO 0163-1829 75, 134420 (2007). 10.1103/PhysRevB.75.134420
21. J. Z. Jiang, Y. X. Zhuang, H. Rasmussen, J. Saida, and A. Inoue, Phys. Rev. B PRBMDO 0163-1829 64, 094208 (2001). 10.1103/PhysRevB.64.094208
22. M. Avrami, J. Chem. Phys. JCPSA6 0021-9606 9, 177 (1941). 10.1063/1.1750872
23. C. Heiliger, M. Gradhand, P. Zahn, and I. Mertig, Phys. Rev. Lett. PRLTAO 0031-9007 99, 066804 (2007). 10.1103/PhysRevLett.99.066804
24. M. Mizuguchi, Y. Suzuki, T. Nagahama, and S. Yuasa, Appl. Phys. Lett. APPLAB 0003-6951 91, 012507 (2007). 10.1063/1.2754372
25. Y. Fukumoto, K. -i. Shimura, A. Kamijo, S. Tahara, and H. Yoda, Appl. Phys. Lett. APPLAB 0003-6951 84, 233 (2004). 10.1063/1.1639128
26. Y. Saito, M. Amano, K. Nakajima, S. Takahashi, and M. Sagoi, J. Magn. Magn. Mater. JMMMDC 0304-8853 223, 293 (2001). 10.1016/S0304-8853(00)01270-1