Coercivity change in an FePt thin layer in a Hall device by voltage application

Applied Physics Letters

Volumn 98, Issue 21, 2011, Pages

  Seki, Takeshi ^a   Kohda, Makoto ^b   Nitta, Junsaku ^b   Takanashi, Koki ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY ENERGIES; FEPT LAYERS; HALL DEVICES; INSULATING LAYERS; THEORETICAL PREDICTION; THIN LAYERS; VOLTAGE APPLICATIONS; VOLTAGE EFFECTS;

HALL EFFECT DEVICES;

COERCIVE FORCE;

EID: 79959438249     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3595318     Document Type: Article

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