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Applied Physics Letters

Volumn 100, Issue 12, 2012, Pages

Electric field effects in low resistance CoFeB-MgO magnetic tunnel junctions with perpendicular anisotropy

(6) Meng, H a Sbiaa, R a Akhtar, M A K a Liu, R S a Naik, V B a Wang, C C a

a DATA STORAGE INSTITUTE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS FIELD; DEVICE SIZES; FREE LAYERS; LOW RESISTANCE; MAGNETIC RANDOM ACCESS MEMORIES; MAGNETIC TUNNEL JUNCTION; PERPENDICULAR ANISOTROPY; SPIN TRANSFER TORQUE;

COBALT COMPOUNDS; MAGNETIC DEVICES; MAGNETIC STORAGE;

ELECTRIC FIELD EFFECTS;

EID: 84859534343 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3695168 Document Type: Article

Times cited : (47)

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