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Volumn 99, Issue 10, 2011, Pages

Rapid thermal annealing study of magnetoresistance and perpendicular anisotropy in magnetic tunnel junctions based on MgO and CoFeB

(8) Wang, Wei Gang a Hageman, Stephen a Li, Mingen a Huang, Sunxiang a Kou, Xiaoming b Fan, Xin b Xiao, John Q b Chien, C L a

a JOHNS HOPKINS UNIVERSITY (United States)

b UNIVERSITY OF DELAWARE (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TIME; IMPURITY DIFFUSION; IN-PLANE; IN-PLANE MAGNETIC ANISOTROPY; MAGNETIC TUNNEL JUNCTION; PERPENDICULAR ANISOTROPY; PERPENDICULAR MAGNETIC ANISOTROPY; TUNNELING MAGNETORESISTANCE;

COBALT COMPOUNDS; ELECTRIC RESISTANCE; MAGNETOELECTRONICS; MAGNETORESISTANCE; RAPID THERMAL ANNEALING; TUNNEL JUNCTIONS;

MAGNETIC ANISOTROPY;

EID: 80052809162 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3634026 Document Type: Article

Times cited : (70)

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