Robust isothermal electric control of exchange bias at room temperature

Nature Materials

Volumn 9, Issue 7, 2010, Pages 579-585

  He, Xi ^a   Wang, Yi ^a   Wu, Ning ^a   Caruso, Anthony N ^b   Vescovo, Elio ^c   Belashchenko, Kirill D ^a   Dowben, Peter A ^a   Binek, Christian ^a  

^a UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^b UNIVERSITY OF MISSOURI KANSAS CITY   (United States)

^c BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; DATA STORAGE EQUIPMENT; DIGITAL STORAGE; ELECTRIC FIELDS; ISOTHERMS; MAGNETIZATION; PHOTOELECTRON SPECTROSCOPY; SINGLE CRYSTALS;

ANTIFERROMAGNETIC DOMAINS; EXCHANGE-BIAS FIELDS; FIRST-PRINCIPLES CALCULATION; INTEGRATION DENSITY; NON-VOLATILE MEMORY; PERMANENT MAGNETIC FIELDS; REDUCED POWER CONSUMPTION; SURFACE MAGNETIZATIONS;

INTERFACE STATES;

EID: 77953916857     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat2785     Document Type: Article

References (36)

1. Wolf, S. A. et al. Spintronics: A spin-based electronics vision for the future. Science 294, 1488-1495 (2001).
2. Utic I., Fabian, J. & Das Sarma, S. Spintronics: Fundamentals and applications. Rev. Mod. Phys. 76, 323-410(2004).
3. Zhirnov, V. V., Hutchby, J. A., Bourianoff, G. I. & Brewer, J. E. Emerging research logic devices. IEEE Circuits Devices 21, 37-46 (2005).
4. Ney, A., Pampuch, C., Koch, R. & Ploog, K. H. Programmable computing with a single magnetoresistive element. Nature 425, 485-487 (2003).
5. Binek, Ch. & Doudin, B. Magnetoelectronics with magnetoelectrics. J. Phys. Condens. Matter 17, L39-L44 (2005).
6. Dery, H., Dalal, P., Cywinski, Ł. & Sham, L. J. Spin-based logic in semiconductors for reconfigurable large-scale circuits. Nature 447, 573-576 (2007).
7. Zavaliche, F. et al. Electrically assisted magnetic recording in multiferroic nanostructures. Nano Lett. 7, 1586-1590 (2007).
8. Tsymbal, E. Y. & Kohlstedt, H. Applied physics: Tunneling across a ferroelectric. Science 313, 181-183 (2006).
9. Maruyama, T. et al. Large voltage-induced magnetic anisotropy change in a few atomic layers of iron. Nature Nanotech. 4, 158-161 (2008).
10. Velev, J. P., Dowben, P. A., Tsymbal, E. Y., Jenkins, S. J. & Caruso, A. N. Interface effects in spin-polarized metal/insulator layered structures. Surf. Sci. Rep. 63, 400-425 (2008).
11. Nogués, J. & Schuller, I. K. Exchange bias. J. Magn. Magn. Mater. 192, 203-232 (1999).
12. Chappert, C., Fert, A. & Van Dau, F. N. The emergence of spin electronics in data storage. Nature Mater. 6, 813-823 (2007).
13. Borisov, P., Hochstrat, A., Chen, X., Kleemann, W. & Binek, Ch. Magnetoelectric switching of exchange bias. Phys. Rev. Lett. 94, 117203 (2005).
14. O'Dell, TH. The Electrodynamics of Magneto-Electric Media (North-Holland, 1970).
15. Borisov, P., Hochstrat, A., Shvartsman, V. V.&Kleemann, W.Superconducting quantum interference device setup for magnetoelectric measurements. Rev. Sci. Instrum. 78, 106105 (2007).
16. Fiebig, M. Revival of the magnetoelectric effect. J. Phys. D 38, R123-R152 (2005).
17. 3 multiferroic thin film heterostructures. Science 299, 1719-1722 (2003).
18. Hur, N. et al. Electric polarization reversal and memory in a multiferroic material induced by magnetic fields. Nature 429, 392-395 (2004).
19. Eerenstein, W., Mathur, N. D. & Scott, J. F. Multiferroic and magnetoelectric materials. Nature 442, 759-765 (2006).
20. Bibes, M. & Barthélémy, A. Multiferroics: Towards a magnetoelectric memory. Nature Mater. 7, 425-426 (2008).
21. Lottermoser, T. et al. Magnetic phase control by an electric field. Nature 430, 541-544 (2004).
22. 3/Fe heterostructures via interface strain coupling. Phys. Rev. B 76, 092108 (2007).
23. Weiler, M. et al. Voltage controlled inversion of magnetic anisotropy in a ferromagnetic thin film at room temperature. New J. Phys. 11, 013021 (2009).
24. Laukhin, V. et al. Electric-field control of exchange bias in multiferroic epitaxial heterostructures. Phys. Rev. Lett. 97, 227201 (2006).
25. Chu, Y-H. et al. Electric-field control of local ferromagnetism using a magnetoelectric multiferroic. Nature Mater. 7, 478-482 (2008).
26. 3 films at room temperature. Nature Mater. 5, 823-829 (2006)
27. Liu, J. P., Fullerton, E., Gutfleisch, O. & Sellmyer, D. J. (eds) in Nanoscale Magnetic Materials and Applications Ch. 6 (Springer, 2009).
28. 3 multilayers. J. Magn. Magn. Mater. 321, 1955-1958 (2009).
29. Kuch, W. et al. Tuning the magnetic coupling across ultrathin antiferromagnetic films by controlling atomic-scale roughness. Nature Mater. 5, 128-133 (2006).
30. 3 subjected to electric and magnetic fields. Zh. Eksp. Teor. Fiz. 94, 284-295 (1988).
31. Freund, H-J., Kuhlenbeck, H. & Staemmler, V. Oxide surfaces. Rep. Prog. Phys. 59, 283-347 (1996).
32. 3. IEEE Trans. Magn. 2, 446-449 (1966).
33. Bromwich, T. J. et al. Remanent magnetic states and interactions in nano-pillars. Nanotechnology 17, 4367-4373 (2006).
34. Kresse, G. & Hafner, J. Ab initio molecular dynamics for open-shell transition metals. Phys. Rev. B 48, 13115-13118 (1993).
35. Kresse, G. & Furthmueller, J. Efficiency of ab inito energy calculations for metals and semiconductors using a plane-wave basis set. Comput. Mater. Sci. 6, 15-50 (1996).
36. Kresse, G. & Furthmueller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54, 11169-11186 (1996).