Effects of drain-bias and ambient on hump formation in the transfer curves of positively gate-biased MgZnO thin film transistors

Thin Solid Films

Volumn 529, Issue , 2013, Pages 360-363

  Tsai, Yi Shiuan ^a   Li, Chih Hung ^a   Chiu, I Chung ^b   Chin, Huai An ^b   Cheng, I Chun ^b   Chen, Jian Z ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Ambient effect; Bias temperature stability; Drain bias; MgZnO; Oxide TFT; Thermal stability; ZnO

Indexed keywords

AMBIENT EFFECT; BIAS TEMPERATURE; DRAIN BIAS; MGZNO; OXIDE TFT; ZNO;

THERMODYNAMIC STABILITY; THIN FILM TRANSISTORS; THIN FILMS; ZINC OXIDE;

ANNEALING;

EID: 84873733535     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.06.028     Document Type: Conference Paper

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