Stability of IZO and a-Si:H TFTs processed at low temperature (200 °c)

IEEE/OSA Journal of Display Technology

Volumn 7, Issue 6, 2011, Pages 339-343

  Kaftanoglu, Korhan ^a   Venugopal, Sameer M ^b   Marrs, Michael ^b   Dey, Aritra ^a   Bawolek, Edward J ^b   Allee, David R ^a   Loy, Doug ^b  

^a Arizona State University   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Electrophoretic; flexible display; indium zinc oxide thin film transistor (IZO TFT); polyethylene naphthalate (PEN); transparent circuits

Indexed keywords

A-SI:H; ARIZONA STATE UNIVERSITY; BACKPLANES; BIAS STRESS; ELECTRICAL BIAS; ELECTROPHORETIC; FLEXIBLE SUBSTRATE; LOW TEMPERATURES; MANUFACTURING STAGES; POLYETHYLENE NAPHTHALATE; POLYETHYLENE NAPHTHALATE (PEN); TFT PROCESS; TRANSPARENT CIRCUITS;

AMORPHOUS FILMS; AMORPHOUS SILICON; ELECTRIC NETWORK TOPOLOGY; ELECTROPHORETIC DISPLAYS; FLEXIBLE DISPLAYS; INDIUM; POLYETHYLENES; SEMICONDUCTING ORGANIC COMPOUNDS; SUBSTRATES; THERMOPLASTICS; THIN FILM CIRCUITS; ZINC;

THIN FILM TRANSISTORS;

EID: 79955521527     PISSN: 1551319X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JDT.2011.2107879     Document Type: Article

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