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Volumn 113, Issue 4, 2013, Pages

Evolution of the resistive switching in chemical solution deposited-derived BiFeO3 thin films with dwell time and annealing temperature

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; BFO FILMS; CHEMICAL SOLUTIONS; DEPLETION LAYER; DWELL TIME; HIGH TEMPERATURE; INTERFACIAL BARRIERS; LOW TEMPERATURE ANNEALING; P-N JUNCTION; POLARIZATION-MODULATED; RESISTIVE SWITCHING;

EID: 84873667512     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4789265     Document Type: Article
Times cited : (19)

References (35)
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    • S. W. Chen and J. M. Wu, Thin Solid Films 519, 499 (2010). 10.1016/j.tsf.2010.08.004
    • (2010) Thin Solid Films , vol.519 , pp. 499
    • Chen, S.W.1    Wu, J.M.2
  • 25
    • 49349129655 scopus 로고
    • 10.1016/0022-3093(77)90092-8
    • O. V. Mazurin, J. Non-Cryst. Solids 25, 129 (1977). 10.1016/0022-3093(77) 90092-8
    • (1977) J. Non-Cryst. Solids , vol.25 , pp. 129
    • Mazurin, O.V.1
  • 30
    • 36149017207 scopus 로고
    • 10.1103/PhysRev.97.1538
    • A. Rose, Phys. Rev. 97, 1538 (1955). 10.1103/PhysRev.97.1538
    • (1955) Phys. Rev. , vol.97 , pp. 1538
    • Rose, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.